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BC856A
-
NXP USA Inc.
-
Discrete Semiconductor Products
- TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
Date Sheet
在庫數 3200
小計金額 $0.00000
仕様 よくある質問
- Mount:Surface Mount
- Surface Mount:YES
- Number of Pins:3
- Number of Terminals:3
- Transistor Element Material:SILICON
- Collector-Emitter Saturation Voltage:-650 mV
- Collector-Emitter Breakdown Voltage:65 V
- RoHS:Compliant
- Package Description:SMALL OUTLINE, R-PDSO-G3
- Package Style:SMALL OUTLINE
- Moisture Sensitivity Levels:1
- Package Body Material:PLASTIC/EPOXY
- Operating Temperature-Min:-55 °C
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:150 °C
- Rohs Code:Yes
- Transition Frequency-Nom (fT):100 MHz
- Manufacturer Part Number:BC856A
- Package Shape:RECTANGULAR
- Manufacturer:Diotec Semiconductor AG
- Number of Elements:1
- Part Life Cycle Code:Active
- Ihs Manufacturer:DIOTEC SEMICONDUCTOR AG
- Risk Rank:0.57
- Part Package Code:SOT-23
- Packaging:Cut Tape
- ECCN Code:EAR99
- Max Operating Temperature:150 °C
- Min Operating Temperature:-65 °C
- Subcategory:Other Transistors
- Max Power Dissipation:250 mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Reach Compliance Code:compliant
- Pin Count:3
- JESD-30 Code:R-PDSO-G3
- Qualification Status:Not Qualified
- Polarity:PNP
- Configuration:SINGLE
- Element Configuration:Single
- Power Dissipation:250 mW
- Polarity/Channel Type:PNP
- Collector Emitter Voltage (VCEO):65 V
- Max Collector Current:100 mA
- JEDEC-95 Code:TO-236
- Collector Base Voltage (VCBO):-80 V
- Power Dissipation-Max (Abs):0.31 W
- Emitter Base Voltage (VEBO):-5 V
- Collector Current-Max (IC):0.1 A
- DC Current Gain-Min (hFE):125
- Collector-Emitter Voltage-Max:65 V
- Width:1.4 mm
- Height:1 mm
- Length:3 mm
- REACH SVHC:No SVHC
在庫數 3200
小計金額 $0.00000











