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CEDM8001TR
-
Central Semiconductor
-
Transistors - FETs, MOSFETs - Single
- SC-101, SOT-883
- Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ULTRA MINI-3
Date Sheet
在庫數 3475
小計金額 $0.00000
仕様 よくある質問
- Mounting Type:Surface Mount
- Package / Case:SC-101, SOT-883
- Surface Mount:YES
- Number of Pins:3
- Supplier Device Package:SOT-883
- Number of Terminals:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
- Power Dissipation (Max):100mW (Ta)
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id:1.1V @ 250µA
- Package Description:HALOGEN FREE AND ULTRA MINI-3
- Package Style:CHIP CARRIER
- Package Body Material:UNSPECIFIED
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:150 °C
- Rohs Code:No
- Manufacturer Part Number:CEDM8001TR
- Package Shape:RECTANGULAR
- Manufacturer:Central Semiconductor Corp
- Number of Elements:1
- Part Life Cycle Code:Active
- Ihs Manufacturer:CENTRAL SEMICONDUCTOR CORP
- Risk Rank:5.66
- Drain Current-Max (ID):0.1 A
- Operating Temperature:-65°C ~ 150°C (TJ)
- Series:--
- Packaging:Tape & Reel (TR)
- JESD-609 Code:e0
- Pbfree Code:No
- Part Status:Active
- ECCN Code:EAR99
- Terminal Finish:TIN LEAD
- Additional Feature:LOGIC LEVEL COMPATIBLE
- HTS Code:8541.21.00.95
- Subcategory:Other Transistors
- Technology:MOSFET (Metal Oxide)
- Terminal Position:BOTTOM
- Terminal Form:NO LEAD
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- JESD-30 Code:R-XBCC-N3
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- FET Type:P-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:8 Ohm @ 10mA, 4V
- Input Capacitance (Ciss) (Max) @ Vds:45pF @ 3V
- Gate Charge (Qg) (Max) @ Vgs:0.66nC @ 4.5V
- Drain to Source Voltage (Vdss):20V
- Vgs (Max):10V
- Polarity/Channel Type:P-CHANNEL
- Drain Current-Max (Abs) (ID):0.1 A
- Drain-source On Resistance-Max:8 Ω
- DS Breakdown Voltage-Min:20 V
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs):0.1 W
- FET Feature:--
- REACH SVHC:unknown
在庫數 3475
小計金額 $0.00000











