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APT5018SLLG/TR
-
Microchip Technology
-
Transistors - FETs, MOSFETs - Single
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- MOSFET N-CH 500V 27A D3PAK
Date Sheet
在庫數 21
- 1+: $9.50955
- 10+: $8.97127
- 100+: $8.46347
- 500+: $7.98440
- 1000+: $7.53246
小計金額 $9.50955
仕様 よくある質問
- Mounting Type:Surface Mount
- Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Surface Mount:YES
- Supplier Device Package:D3PAK
- Number of Terminals:2
- Transistor Element Material:SILICON
- Power Dissipation (Max):300W (Tc)
- Base Product Number:APT5018
- Drive Voltage (Max Rds On, Min Rds On):10V
- Current - Continuous Drain (Id) @ 25℃:27A (Tc)
- Product Status:Active
- Mfr:Microchip Technology
- Vds - Drain-Source Breakdown Voltage:500 V
- Typical Turn-On Delay Time:9 ns
- Vgs th - Gate-Source Threshold Voltage:5 V
- Pd - Power Dissipation:300 W
- Transistor Polarity:N-Channel
- Maximum Operating Temperature:+ 150 C
- Vgs - Gate-Source Voltage:- 30 V, + 30 V
- Unit Weight:0.218699 oz
- Minimum Operating Temperature:- 55 C
- Factory Pack QuantityFactory Pack Quantity:400
- Mounting Styles:SMD/SMT
- Channel Mode:Enhancement
- Manufacturer:Microchip
- Brand:Microchip Technology
- Qg - Gate Charge:58 nC
- Rds On - Drain-Source Resistance:180 mOhms
- RoHS:Details
- Typical Turn-Off Delay Time:18 ns
- Id - Continuous Drain Current:27 A
- Package Description:SMALL OUTLINE, R-PSSO-G2
- Package Style:SMALL OUTLINE
- Package Body Material:PLASTIC/EPOXY
- Operating Temperature-Min:-55 °C
- Operating Temperature-Max:150 °C
- Manufacturer Part Number:APT5018SLLG/TR
- Package Shape:RECTANGULAR
- Number of Elements:1
- Part Life Cycle Code:Active
- Ihs Manufacturer:MICROCHIP TECHNOLOGY INC
- Risk Rank:5.65
- Drain Current-Max (ID):27 A
- Operating Temperature:-55°C ~ 150°C (TJ)
- Packaging:Reel
- Subcategory:MOSFETs
- Terminal Position:SINGLE
- Terminal Form:GULL WING
- Reach Compliance Code:unknown
- JESD-30 Code:R-PSSO-G2
- Configuration:Single
- Number of Channels:1 Channel
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:180mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id:5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds:2596 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
- Rise Time:4 ns
- Drain to Source Voltage (Vdss):500 V
- Vgs (Max):±30V
- Polarity/Channel Type:N-CHANNEL
- Product Type:MOSFET
- Transistor Type:1 N-Channel
- Drain Current-Max (Abs) (ID):27 A
- Drain-source On Resistance-Max:0.18 Ω
- Pulsed Drain Current-Max (IDM):108 A
- DS Breakdown Voltage-Min:500 V
- Avalanche Energy Rating (Eas):1210 mJ
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs):300 W
- FET Feature:-
- Feedback Cap-Max (Crss):38 pF
- Product Category:MOSFET
在庫數 21
- 1+: $9.50955
- 10+: $8.97127
- 100+: $8.46347
- 500+: $7.98440
- 1000+: $7.53246
小計金額 $9.50955











