画像はあくまで参考です。
EMB60T2R
-
Rohm Semiconductor
-
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- SOT-563, SOT-666
- PNP PNP DIGITAL TRANSISTOR (WITH
Date Sheet
在庫數 8021
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:Production (Last Updated: 2 years ago)
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Mount:Surface Mount
- Surface Mount:YES
- Supplier Device Package:EMT6
- Number of Terminals:6
- Transistor Element Material:SILICON
- Mfr:Rohm Semiconductor
- Product Status:Active
- Current-Collector (Ic) (Max):100mA
- DC Current Gain:80
- Emitter-Collector Voltage (Max):50(V)
- Collector Current (DC):0.1(A)
- Typical Input Resistor:2.2
- Package Type:EMT
- Typical Resistor Ratio:0.05
- MSL:MSL 1 - Unlimited
- Qualification:-
- Transistor Polarity:Dual PNP
- Number of Elements per Chip:2
- Maximum Collector Emitter Voltage:-50 V
- Maximum DC Collector Current:100 mA
- Minimum DC Current Gain:80
- Pd - Power Dissipation:150 mW
- Maximum Operating Temperature:+ 150 C
- Factory Pack QuantityFactory Pack Quantity:8000
- Mounting Styles:SMD/SMT
- Part # Aliases:EMB60
- Manufacturer:ROHM Semiconductor
- Brand:ROHM Semiconductor
- Maximum Operating Frequency:250 MHz
- RoHS:Details
- Package Description:ROHS COMPLIANT, EMT6, SC-107C, 6 PIN
- Package Style:SMALL OUTLINE
- Moisture Sensitivity Levels:1
- Package Body Material:PLASTIC/EPOXY
- Reflow Temperature-Max (s):NOT SPECIFIED
- Rohs Code:Yes
- Transition Frequency-Nom (fT):250 MHz
- Manufacturer Part Number:EMB60T2R
- Package Shape:RECTANGULAR
- Number of Elements:2
- Part Life Cycle Code:Active
- Ihs Manufacturer:ROHM CO LTD
- Risk Rank:2.34
- Series:-
- Packaging:Tape and Reel
- ECCN Code:EAR99
- Type:PNP
- Subcategory:Transistors
- Terminal Position:DUAL
- Terminal Form:FLAT
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:compliant
- Pin Count:6
- JESD-30 Code:R-PDSO-F6
- Output Voltage:150 mV
- Configuration:Dual
- Power Dissipation:0.15(W)
- Power - Max:150mW
- Transistor Application:SWITCHING
- Polarity/Channel Type:PNP
- Product Type:BJTs - Bipolar Transistors - Pre-Biased
- Transistor Type:2 PNP Pre-Biased (Dual)
- DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
- Current - Collector Cutoff (Max):500nA
- Vce Saturation (Max) @ Ib, Ic:150mV @ 500μA, 5mA
- Voltage - Collector Emitter Breakdown (Max):50V
- Frequency - Transition:250MHz
- Collector Current-Max (IC):0.1 A
- DC Current Gain-Min (hFE):80
- Resistor - Base (R1):2kOhms
- Continuous Collector Current:100mA
- Resistor - Emitter Base (R2):47kOhms
- Collector-Emitter Voltage-Max:50 V
- Product Category:Bipolar Transistors - Pre-Biased
在庫數 8021
小計金額 $0.00000











