2N5115E3

Microchip Technology
Transistors - JFETs
TO-206AA, TO-18-3 Metal Can
JFET
Date Sheet

在庫數 80

小計金額 $0.00000

仕様よくある質問

Package / Case：TO-206AA, TO-18-3 Metal Can
Mounting Type：Through Hole
Surface Mount：NO
Supplier Device Package：TO-18 (TO-206AA)
Number of Terminals：3
Transistor Element Material：SILICON
Product Status：Active
Package：Bulk
Mfr：Microchip Technology
Vds - Drain-Source Breakdown Voltage：30 V
Pd - Power Dissipation：500 mW
Transistor Polarity：P-Channel
Maximum Operating Temperature：+ 200 C
Minimum Operating Temperature：- 65 C
Factory Pack QuantityFactory Pack Quantity：1
Drain-Source Current at Vgs=0：- 15 mA to - 60 mA
Mounting Styles：Through Hole
Manufacturer：Microchip
Brand：Microchip Technology
Rds On - Drain-Source Resistance：100 Ohms
Maximum Drain Gate Voltage：30 V
RoHS：Details
Vgs - Gate-Source Breakdown Voltage：30 V
Gate-Source Cutoff Voltage：3 V to 6 V
Package Description：CYLINDRICAL, O-MBCY-W3
Package Style：CYLINDRICAL
Package Body Material：METAL
Rohs Code：Yes
Manufacturer Part Number：2N5115E3
Package Shape：ROUND
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：5.07
Part Package Code：BCY
Operating Temperature：-65°C ~ 200°C (TJ)
Series：-
Packaging：Bulk
ECCN Code：EAR99
Additional Feature：HIGH RELIABILITY
HTS Code：8541.21.00.95
Subcategory：Transistors
Technology：Si
Terminal Position：BOTTOM
Terminal Form：WIRE
Reach Compliance Code：compliant
Pin Count：3
JESD-30 Code：O-MBCY-W3
Configuration：Single
Operating Mode：DEPLETION MODE
Power - Max：500 mW
FET Type：P-Channel
Input Capacitance (Ciss) (Max) @ Vds：25pF @ 15V
Drain to Source Voltage (Vdss)：30 V
Polarity/Channel Type：P-CHANNEL
Product Type：JFETs
JEDEC-95 Code：TO-206AA
Drain-source On Resistance-Max：100 Ω
DS Breakdown Voltage-Min：30 V
FET Technology：JUNCTION
Feedback Cap-Max (Crss)：7 pF
Current - Drain (Idss) @ Vds (Vgs=0)：15 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id：3 V @ 1 nA
Voltage - Breakdown (V(BR)GSS)：30 V
Resistance - RDS(On)：100 Ohms
Product Category：JFET

在庫數 80

小計金額 $0.00000

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2N5115E3