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2N6190
-
Microchip Technology
-
Transistors - Bipolar (BJT) - Single
- TO-205AA, TO-5-3 Metal Can
- POWER BJT
Date Sheet
在庫數 53
小計金額 $0.00000
仕様 よくある質問
- Package / Case：TO-205AA, TO-5-3 Metal Can
- Mounting Type：Through Hole
- Surface Mount：NO
- Number of Pins：3
- Supplier Device Package：TO-5AA
- Number of Terminals：3
- Transistor Element Material：SILICON
- Mfr：Microchip Technology
- Current-Collector (Ic) (Max)：5 A
- Product Status：Active
- Package：Bulk
- Factory Pack QuantityFactory Pack Quantity：1
- Manufacturer：Microchip
- Brand：Microchip Technology / Atmel
- Package Description：CYLINDRICAL, O-MBCY-W3
- Package Style：CYLINDRICAL
- Package Body Material：METAL
- Operating Temperature-Min：-65 °C
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Operating Temperature-Max：200 °C
- Rohs Code：No
- Transition Frequency-Nom (fT)：30 MHz
- Manufacturer Part Number：2N6190
- Turn-on Time-Max (ton)：200 ns
- Package Shape：ROUND
- Number of Elements：1
- Part Life Cycle Code：Active
- Ihs Manufacturer：CENTRAL SEMICONDUCTOR CORP
- Turn-off Time-Max (toff)：2200 ns
- Risk Rank：5.35
- Part Package Code：TO-39
- Emitter- Base Voltage VEBO：6 V
- Pd - Power Dissipation：10 W
- Transistor Polarity：PNP
- Maximum Operating Temperature：+ 200 C
- DC Collector/Base Gain hfe Min：30
- Collector-Emitter Saturation Voltage：1.2 V
- Minimum Operating Temperature：- 55 C
- Mounting Styles：Through Hole
- Gain Bandwidth Product fT：30 MHz
- Maximum DC Collector Current：5 A
- Collector- Emitter Voltage VCEO Max：80 V
- Series：-
- Operating Temperature：-
- JESD-609 Code：e0
- Pbfree Code：No
- ECCN Code：EAR99
- Terminal Finish：Tin/Lead (Sn/Pb)
- Subcategory：Transistors
- Technology：Si
- Terminal Position：BOTTOM
- Terminal Form：WIRE
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：unknown
- JESD-30 Code：O-MBCY-W3
- Qualification Status：Not Qualified
- Configuration：SINGLE
- Power - Max：10 W
- Transistor Application：SWITCHING
- Polarity/Channel Type：PNP
- Product Type：BJTs - Bipolar Transistors
- Transistor Type：PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector Cutoff (Max)：-
- JEDEC-95 Code：TO-39
- Vce Saturation (Max) @ Ib, Ic：-
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Frequency - Transition：-
- Collector Base Voltage (VCBO)：80 V
- Power Dissipation-Max (Abs)：10 W
- Collector Current-Max (IC)：5 A
- DC Current Gain-Min (hFE)：20
- Collector-Emitter Voltage-Max：80 V
- VCEsat-Max：1.2 V
- Collector-Base Capacitance-Max：300 pF
- Product Category：Bipolar Transistors - BJT
在庫數 53
小計金額 $0.00000
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