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2N5085
-
Microchip Technology
-
Transistors - Bipolar (BJT) - Single
- TO-210AA, TO-59-4, Stud
- POWER BJT
Date Sheet
在庫數 2483
- 1+: $201.88796
- 10+: $190.46034
- 100+: $179.67956
- 500+: $169.50902
- 1000+: $159.91417
小計金額 $201.88796
仕様 よくある質問
- Mounting Type:Stud Mount
- Package / Case:TO-210AA, TO-59-4, Stud
- Surface Mount:NO
- Supplier Device Package:TO-59
- Number of Terminals:4
- Transistor Element Material:SILICON
- Mfr:Microchip Technology
- Package:Bulk
- Product Status:Active
- Current-Collector (Ic) (Max):10 A
- Transistor Polarity:NPN
- Factory Pack QuantityFactory Pack Quantity:1
- Manufacturer:Microchip
- Brand:Microchip Technology
- Package Style:POST/STUD MOUNT
- Package Body Material:METAL
- Operating Temperature-Max:175 °C
- Transition Frequency-Nom (fT):50 MHz
- Manufacturer Part Number:2N5085
- Package Shape:ROUND
- Number of Elements:1
- Part Life Cycle Code:Active
- Ihs Manufacturer:API TECHNOLOGIES CORP
- Risk Rank:5.5
- Series:-
- Operating Temperature:-65°C ~ 200°C (TJ)
- ECCN Code:EAR99
- Subcategory:Transistors
- Technology:Si
- Terminal Position:UPPER
- Terminal Form:SOLDER LUG
- Reach Compliance Code:compliant
- JESD-30 Code:O-MUPM-D4
- Qualification Status:Not Qualified
- Configuration:SINGLE
- Case Connection:ISOLATED
- Power - Max:20 W
- Polarity/Channel Type:NPN
- Product Type:BJTs - Bipolar Transistors
- Transistor Type:PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce:-
- Current - Collector Cutoff (Max):-
- JEDEC-95 Code:TO-111
- Vce Saturation (Max) @ Ib, Ic:-
- Voltage - Collector Emitter Breakdown (Max):80 V
- Frequency - Transition:-
- Power Dissipation-Max (Abs):35 W
- Collector Current-Max (IC):10 A
- DC Current Gain-Min (hFE):40
- Collector-Emitter Voltage-Max:80 V
- VCEsat-Max:0.5 V
- Product Category:Bipolar Transistors - BJT
在庫數 2483
- 1+: $201.88796
- 10+: $190.46034
- 100+: $179.67956
- 500+: $169.50902
- 1000+: $159.91417
小計金額 $201.88796











