画像はあくまで参考です。
2N5584
-
Microchip Technology
-
Transistors - Bipolar (BJT) - Single
- TO-211MB, TO-63-4, Stud
- POWER BJT
Date Sheet
在庫數 2598
小計金額 $0.00000
仕様 よくある質問
- Mounting Type:Stud Mount
- Package / Case:TO-211MB, TO-63-4, Stud
- Surface Mount:NO
- Supplier Device Package:TO-63
- Number of Terminals:3
- Transistor Element Material:SILICON
- Mfr:Microchip Technology
- Package:Bulk
- Product Status:Active
- Current-Collector (Ic) (Max):30 A
- Package Style:POST/STUD MOUNT
- Package Body Material:METAL
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:175 °C
- Rohs Code:No
- Transition Frequency-Nom (fT):30 MHz
- Manufacturer Part Number:2N5584
- Package Shape:ROUND
- Manufacturer:Solitron Devices Inc
- Number of Elements:1
- Part Life Cycle Code:Active
- Ihs Manufacturer:SOLITRON DEVICES INC
- Risk Rank:5.5
- Transistor Polarity:NPN
- Series:-
- Operating Temperature:-65°C ~ 200°C (TJ)
- Pbfree Code:No
- ECCN Code:EAR99
- Subcategory:Other Transistors
- Technology:Si
- Terminal Position:UPPER
- Terminal Form:SOLDER LUG
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:unknown
- JESD-30 Code:O-MUPM-D3
- Qualification Status:Not Qualified
- Configuration:SINGLE
- Case Connection:COLLECTOR
- Power - Max:175 W
- Transistor Application:SWITCHING
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce:-
- Current - Collector Cutoff (Max):-
- JEDEC-95 Code:TO-63
- Vce Saturation (Max) @ Ib, Ic:1.5V @ 2mA, 10mA
- Voltage - Collector Emitter Breakdown (Max):180 V
- Frequency - Transition:-
- Power Dissipation-Max (Abs):100 W
- Collector Current-Max (IC):30 A
- DC Current Gain-Min (hFE):40
- Collector-Emitter Voltage-Max:180 V
- VCEsat-Max:0.5 V
- Power Dissipation Ambient-Max:100 W
在庫數 2598
小計金額 $0.00000











