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NTE2980
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NTE Electronics, Inc.
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Transistors - FETs, MOSFETs - Single
- Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Date Sheet
在庫數 725
小計金額 $0.00000
仕様 よくある質問
- Surface Mount：NO
- Number of Terminals：3
- Transistor Element Material：SILICON
- Manufacturer Part Number：NTE2980
- Manufacturer：NTE Electronics
- Package Description：IN-LINE, R-PSIP-T3
- Package Style：IN-LINE
- Package Body Material：PLASTIC/EPOXY
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Operating Temperature-Max：150 °C
- Rohs Code：Yes
- Package Shape：RECTANGULAR
- Number of Elements：1
- Part Life Cycle Code：Active
- Ihs Manufacturer：NTE ELECTRONICS INC
- Risk Rank：5.74
- Drain Current-Max (ID)：7.7 A
- ECCN Code：EAR99
- Subcategory：FET General Purpose Power
- Terminal Position：SINGLE
- Terminal Form：THROUGH-HOLE
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：unknown
- JESD-30 Code：R-PSIP-T3
- Qualification Status：Not Qualified
- Configuration：SINGLE WITH BUILT-IN DIODE
- Operating Mode：ENHANCEMENT MODE
- Transistor Application：SWITCHING
- Polarity/Channel Type：N-CHANNEL
- Drain Current-Max (Abs) (ID)：7.7 A
- Drain-source On Resistance-Max：0.2 Ω
- Pulsed Drain Current-Max (IDM)：31 A
- DS Breakdown Voltage-Min：60 V
- Avalanche Energy Rating (Eas)：47 mJ
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)：25 W
在庫數 725
小計金額 $0.00000
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