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2SJ358
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NEC
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Transistors - FETs, MOSFETs - Single
- Power Field-Effect Transistor, 3A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, MP-2, 3 PIN
Date Sheet
在庫數 5000
小計金額 $0.00000
仕様 よくある質問
- Surface Mount：YES
- Number of Terminals：3
- Transistor Element Material：SILICON
- Package Description：SMALL OUTLINE, R-PSSO-F3
- Package Style：SMALL OUTLINE
- Package Body Material：PLASTIC/EPOXY
- Reflow Temperature-Max (s)：NOT SPECIFIED
- Operating Temperature-Max：150 °C
- Rohs Code：No
- Manufacturer Part Number：2SJ358
- Package Shape：RECTANGULAR
- Manufacturer：Renesas Electronics Corporation
- Number of Elements：1
- Part Life Cycle Code：Obsolete
- Ihs Manufacturer：RENESAS ELECTRONICS CORP
- Risk Rank：5.33
- Drain Current-Max (ID)：3 A
- JESD-609 Code：e0
- ECCN Code：EAR99
- Terminal Finish：Tin/Lead (Sn/Pb)
- Subcategory：Other Transistors
- Terminal Position：SINGLE
- Terminal Form：FLAT
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Reach Compliance Code：unknown
- Pin Count：3
- JESD-30 Code：R-PSSO-F3
- Qualification Status：Not Qualified
- Configuration：SINGLE WITH BUILT-IN DIODE
- Operating Mode：ENHANCEMENT MODE
- Case Connection：DRAIN
- Transistor Application：SWITCHING
- Polarity/Channel Type：P-CHANNEL
- Drain Current-Max (Abs) (ID)：3 A
- Drain-source On Resistance-Max：0.4 Ω
- Pulsed Drain Current-Max (IDM)：6 A
- DS Breakdown Voltage-Min：60 V
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)：2 W
在庫數 5000
小計金額 $0.00000
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