APT80GP60J

Microchip Technology
Transistors - IGBTs - Modules
ISOTOP-4
IGBT Modules FG, IGBT, 600V, 80A, SOT-227View in Development Tools Selector
Date Sheet

在庫數 39

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：Production (Last Updated: 2 months ago)
Package / Case：ISOTOP-4
Mounting Type：Chassis Mount
Mount：Chassis Mount, Screw
Surface Mount：NO
Number of Pins：4
Supplier Device Package：ISOTOP®
Number of Terminals：4
Transistor Element Material：SILICON
RoHS：Details
Collector- Emitter Voltage VCEO Max：600 V
Collector-Emitter Saturation Voltage：2.2 V
Continuous Collector Current at 25 C：151 A
Gate-Emitter Leakage Current：100 nA
Pd - Power Dissipation：462 W
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 150 C
Maximum Gate Emitter Voltage：20 V
Mounting Styles：SMD/SMT
Factory Pack QuantityFactory Pack Quantity：1
Unit Weight：2.264236 oz
Package：Tube
Current-Collector (Ic) (Max)：151 A
Base Product Number：APT80GP60
Mfr：Microchip Technology
Product Status：Active
Collector-Emitter Breakdown Voltage：600 V
Voltage Rating (DC)：600 V
Package Description：ISOTOP-4
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Turn-on Time-Nom (ton)：87 ns
Manufacturer Package Code：ISOTOP
Turn-off Time-Nom (toff)：284 ns
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：APT80GP60J
Package Shape：RECTANGULAR
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：1.53
Part Package Code：ISOTOP
Packaging：Tube
Operating Temperature：-55°C ~ 150°C (TJ)
Series：POWER MOS 7®
JESD-609 Code：e1
Pbfree Code：Yes
Terminal Finish：Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Additional Feature：LOW CONDUCTION LOSS
Max Power Dissipation：462 W
Terminal Position：UPPER
Terminal Form：UNSPECIFIED
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：unknown
Current Rating：151 A
Pin Count：4
JESD-30 Code：R-PUFM-X4
Qualification Status：Not Qualified
Configuration：Single
Element Configuration：Single
Case Connection：ISOLATED
Power - Max：462 W
Transistor Application：POWER CONTROL
Polarity/Channel Type：N-CHANNEL
Input：Standard
Collector Emitter Voltage (VCEO)：600 V
Max Collector Current：151 A
Current - Collector Cutoff (Max)：1 mA
Voltage - Collector Emitter Breakdown (Max)：600 V
Input Capacitance：9.84 nF
Power Dissipation-Max (Abs)：462 W
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 80A
Collector Current-Max (IC)：151 A
IGBT Type：PT
Collector-Emitter Voltage-Max：600 V
NTC Thermistor：No
Gate-Emitter Voltage-Max：20 V
Input Capacitance (Cies) @ Vce：9.84 nF @ 25 V
Product：IGBT Silicon Modules
Radiation Hardening：No
Lead Free：Lead Free

在庫數 39

小計金額 $0.00000

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APT80GP60J