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APT75F50L

在庫數 42

小計金額 $0.00000

仕様 よくある質問
  • Lifecycle Status:Production (Last Updated: 2 months ago)
  • Package / Case:TO-264-3
  • Mounting Type:Through Hole
  • Mount:Through Hole
  • Supplier Device Package:TO-264 [L]
  • RoHS:Details
  • Mounting Styles:Through Hole
  • Transistor Polarity:N-Channel
  • Vds - Drain-Source Breakdown Voltage:500 V
  • Id - Continuous Drain Current:75 A
  • Rds On - Drain-Source Resistance:75 mOhms
  • Vgs - Gate-Source Voltage:- 30 V, + 30 V
  • Vgs th - Gate-Source Threshold Voltage:4 V
  • Qg - Gate Charge:290 nC
  • Minimum Operating Temperature:- 55 C
  • Maximum Operating Temperature:+ 150 C
  • Pd - Power Dissipation:1.04 kW
  • Channel Mode:Enhancement
  • Fall Time:39 ns
  • Forward Transconductance - Min:55 S
  • Factory Pack QuantityFactory Pack Quantity:1
  • Typical Turn-Off Delay Time:120 ns
  • Typical Turn-On Delay Time:45 ns
  • Unit Weight:0.352740 oz
  • Package:Tube
  • Base Product Number:APT75F50
  • Current - Continuous Drain (Id) @ 25℃:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Mfr:Microchip Technology
  • Power Dissipation (Max):1040W (Tc)
  • Product Status:Active
  • Number of Elements:1
  • Turn Off Delay Time:120 ns
  • Packaging:Tube
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Series:POWER MOS 8™
  • Max Operating Temperature:150 °C
  • Min Operating Temperature:-55 °C
  • Max Power Dissipation:1.04 kW
  • Configuration:Single
  • Number of Channels:1 Channel
  • Power Dissipation:1.04 kW
  • Turn On Delay Time:45 ns
  • FET Type:N-Channel
  • Rds On (Max) @ Id, Vgs:75mOhm @ 37A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Input Capacitance (Ciss) (Max) @ Vds:11600 pF @ 25 V
  • Gate Charge (Qg) (Max) @ Vgs:290 nC @ 10 V
  • Rise Time:55 ns
  • Drain to Source Voltage (Vdss):500 V
  • Vgs (Max):±30V
  • Continuous Drain Current (ID):75 A
  • Gate to Source Voltage (Vgs):30 V
  • Input Capacitance:11.6 nF
  • FET Feature:-
  • Rds On Max:75 mΩ
  • Radiation Hardening:No

在庫數 42

小計金額 $0.00000