APT56F50L

Microchip Technology
Transistors - FETs, MOSFETs - Single
TO-264-3
MOSFET FG, FREDFET, 500V, TO-264View in Development Tools Selector
Date Sheet

在庫數 58

小計金額 $0.00000

仕様よくある質問

Package / Case：TO-264-3
Mounting Type：Through Hole
Mount：Through Hole
Supplier Device Package：TO-264 [L]
RoHS：Details
Mounting Styles：Through Hole
Transistor Polarity：N-Channel
Vds - Drain-Source Breakdown Voltage：500 V
Id - Continuous Drain Current：56 A
Rds On - Drain-Source Resistance：100 mOhms
Vgs - Gate-Source Voltage：- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage：4 V
Qg - Gate Charge：220 nC
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 150 C
Pd - Power Dissipation：780 W
Channel Mode：Enhancement
Fall Time：33 ns
Forward Transconductance - Min：43 S
Factory Pack QuantityFactory Pack Quantity：1
Typical Turn-Off Delay Time：100 ns
Typical Turn-On Delay Time：38 ns
Unit Weight：0.352740 oz
Package：Tube
Base Product Number：APT56F50
Current - Continuous Drain (Id) @ 25℃：56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：Microchip Technology
Power Dissipation (Max)：780W (Tc)
Product Status：Active
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 2.5mA
Number of Elements：1
Turn Off Delay Time：100 ns
Packaging：Tube
Operating Temperature：-55°C ~ 150°C (TJ)
Series：POWER MOS 8™
Part Status：Production (Last Updated: 2 months ago)
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Max Power Dissipation：780 W
Configuration：Single
Number of Channels：1 Channel
Power Dissipation：780 W
Turn On Delay Time：38 ns
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：100mOhm @ 28A, 10V
Input Capacitance (Ciss) (Max) @ Vds：8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：220 nC @ 10 V
Rise Time：45 ns
Drain to Source Voltage (Vdss)：500 V
Vgs (Max)：±30V
Continuous Drain Current (ID)：56 A
Gate to Source Voltage (Vgs)：30 V
Input Capacitance：8.8 nF
FET Feature：-
Rds On Max：100 mΩ
Radiation Hardening：No

在庫數 58

小計金額 $0.00000

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APT56F50L