APT66M60B2

Microchip Technology
Transistors - FETs, MOSFETs - Single
T-MAX-3
MOSFET FG, MOSFET, 600V, TO-247 T-MAXView in Development Tools Selector
Date Sheet

在庫數 9000

小計金額 $0.00000

仕様よくある質問

Package / Case：T-MAX-3
Mounting Type：Through Hole
Mount：Through Hole
Surface Mount：NO
Number of Pins：3
Supplier Device Package：T-MAX™ [B2]
Number of Terminals：3
Transistor Element Material：SILICON
RoHS：Details
Mounting Styles：Through Hole
Transistor Polarity：N-Channel
Vds - Drain-Source Breakdown Voltage：600 V
Id - Continuous Drain Current：70 A
Rds On - Drain-Source Resistance：75 mOhms
Vgs - Gate-Source Voltage：- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage：4 V
Qg - Gate Charge：330 nC
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 150 C
Pd - Power Dissipation：1.135 kW
Channel Mode：Enhancement
Tradename：Power MOS 8
Fall Time：70 ns
Forward Transconductance - Min：65 S
Factory Pack QuantityFactory Pack Quantity：1
Typical Turn-Off Delay Time：225 ns
Typical Turn-On Delay Time：75 ns
Unit Weight：0.208116 oz
Continuous Drain Current Id：70
Package：Tube
Base Product Number：APT66M60
Current - Continuous Drain (Id) @ 25℃：70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：Microchip Technology
Power Dissipation (Max)：1135W (Tc)
Product Status：Active
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 2.5mA
Number of Elements：1
Voltage Rating (DC)：600 V
Turn Off Delay Time：225 ns
Package Description：ROHS COMPLIANT, T-MAX, 3 PIN
Package Style：IN-LINE
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：APT66M60B2
Package Shape：RECTANGULAR
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：5.21
Drain Current-Max (ID)：70 A
Packaging：Tube
Operating Temperature：-55°C ~ 150°C (TJ)
Series：-
Pbfree Code：Yes
Part Status：Production (Last Updated: 2 months ago)
ECCN Code：EAR99
Resistance：90 mΩ
Terminal Finish：Pure Matte Tin (Sn)
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Additional Feature：AVALANCHE RATED, HIGH RELIABILITY
Max Power Dissipation：1.135 kW
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Current Rating：66 A
JESD-30 Code：R-PSIP-T3
Qualification Status：Not Qualified
Configuration：Single
Number of Channels：1 Channel
Operating Mode：ENHANCEMENT MODE
Power Dissipation：1.135
Case Connection：DRAIN
Turn On Delay Time：75 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：100mOhm @ 33A, 10V
Input Capacitance (Ciss) (Max) @ Vds：13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：330 nC @ 10 V
Rise Time：85 ns
Drain to Source Voltage (Vdss)：600 V
Vgs (Max)：±30V
Polarity/Channel Type：N-CHANNEL
Continuous Drain Current (ID)：70 A
Gate to Source Voltage (Vgs)：30 V
Drain-source On Resistance-Max：0.09 Ω
Drain to Source Breakdown Voltage：600 V
Pulsed Drain Current-Max (IDM)：245 A
Input Capacitance：13.19 nF
DS Breakdown Voltage-Min：600 V
Channel Type：N
Avalanche Energy Rating (Eas)：1845 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-
Drain to Source Resistance：75 mΩ
Rds On Max：100 mΩ
Height：5.31 mm
Length：21.46 mm
Width：16.26 mm
REACH SVHC：unknown
Lead Free：Lead Free

在庫數 9000

小計金額 $0.00000

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APT66M60B2