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APT22F80S

在庫數 9000

小計金額 $0.00000

仕様 よくある質問
  • Package / Case:D3PAK-3
  • Mounting Type:Surface Mount
  • Supplier Device Package:D3Pak
  • Vgs - Gate-Source Voltage:- 30 V, + 30 V
  • Vgs th - Gate-Source Threshold Voltage:2.5 V
  • Qg - Gate Charge:150 nC
  • Minimum Operating Temperature:- 55 C
  • Maximum Operating Temperature:+ 150 C
  • Pd - Power Dissipation:625 W
  • Channel Mode:Enhancement
  • Factory Pack QuantityFactory Pack Quantity:1
  • Unit Weight:0.218699 oz
  • Mounting Styles:SMD/SMT
  • RoHS:Details
  • Transistor Polarity:N-Channel
  • Vds - Drain-Source Breakdown Voltage:800 V
  • Id - Continuous Drain Current:23 A
  • Rds On - Drain-Source Resistance:430 mOhms
  • Package:Tube
  • Base Product Number:APT22F80
  • Current - Continuous Drain (Id) @ 25℃:23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Mfr:Microchip Technology
  • Power Dissipation (Max):625W (Tc)
  • Product Status:Active
  • Packaging:Tube
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Series:POWER MOS 8™
  • Configuration:Single
  • Number of Channels:1 Channel
  • FET Type:N-Channel
  • Rds On (Max) @ Id, Vgs:430mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds:4595 pF @ 25 V
  • Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
  • Drain to Source Voltage (Vdss):800 V
  • Vgs (Max):±30V
  • FET Feature:-

在庫數 9000

小計金額 $0.00000