APT48M80B2

Microchip Technology
Transistors - FETs, MOSFETs - Single
TO-247-3
MOSFET FG, MOSFET, 800V, TO-247 T-MAXView in Development Tools Selector
Date Sheet

在庫數 20

小計金額 $0.00000

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Lifecycle Status：Production (Last Updated: 2 months ago)
Package / Case：TO-247-3
Mounting Type：Through Hole
Mount：Through Hole
Supplier Device Package：T-MAX™ [B2]
RoHS：Details
Mounting Styles：Through Hole
Transistor Polarity：N-Channel
Vds - Drain-Source Breakdown Voltage：800 V
Id - Continuous Drain Current：49 A
Rds On - Drain-Source Resistance：170 mOhms
Vgs - Gate-Source Voltage：- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage：3 V
Qg - Gate Charge：305 nC
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 150 C
Pd - Power Dissipation：1.135 kW
Channel Mode：Enhancement
Fall Time：70 ns
Forward Transconductance - Min：43 S
Factory Pack QuantityFactory Pack Quantity：1
Typical Turn-Off Delay Time：230 ns
Typical Turn-On Delay Time：55 ns
Unit Weight：0.211644 oz
Package：Tube
Base Product Number：APT48M80
Current - Continuous Drain (Id) @ 25℃：49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：Microchip Technology
Power Dissipation (Max)：1135W (Tc)
Product Status：Active
Number of Elements：1
Voltage Rating (DC)：800 V
Turn Off Delay Time：230 ns
Packaging：Tube
Operating Temperature：-55°C ~ 150°C (TJ)
Series：POWER MOS 8™
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Max Power Dissipation：1.135 kW
Current Rating：48 A
Configuration：Single
Number of Channels：1 Channel
Turn On Delay Time：55 ns
FET Type：N-Channel
Rds On (Max) @ Id, Vgs：190mOhm @ 24A, 10V
Vgs(th) (Max) @ Id：5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds：9330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：305 nC @ 10 V
Rise Time：75 ns
Drain to Source Voltage (Vdss)：800 V
Vgs (Max)：±30V
Transistor Type：1 N-Channel
Continuous Drain Current (ID)：49 A
Gate to Source Voltage (Vgs)：30 V
Input Capacitance：9.33 nF
FET Feature：-
Rds On Max：190 mΩ
Radiation Hardening：No
Lead Free：Lead Free

在庫數 20

小計金額 $0.00000

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APT48M80B2