APT5015BVRG

Microchip Technology
Transistors - FETs, MOSFETs - Single
TO-247-3
MOSFET FG, MOSFET, 556, 500V, TO-247, RoHSView in Development Tools Selector
Date Sheet

在庫數 23

小計金額 $0.00000

仕様よくある質問

Package / Case：TO-247-3
Mounting Type：Through Hole
Surface Mount：NO
Supplier Device Package：TO-247 [B]
Number of Terminals：3
Transistor Element Material：SILICON
RoHS：Details
Mounting Styles：Through Hole
Transistor Polarity：N-Channel
Vds - Drain-Source Breakdown Voltage：500 V
Id - Continuous Drain Current：32 A
Rds On - Drain-Source Resistance：150 mOhms
Vgs - Gate-Source Voltage：- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage：4 V
Qg - Gate Charge：200 nC
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 150 C
Pd - Power Dissipation：370 W
Channel Mode：Enhancement
Factory Pack QuantityFactory Pack Quantity：1
Unit Weight：0.211644 oz
Continuous Drain Current Id：32
Package：Tube
Base Product Number：APT5015
Current - Continuous Drain (Id) @ 25℃：32A (Tc)
Mfr：Microchip Technology
Product Status：Active
Package Description：FLANGE MOUNT, R-PSFM-T3
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Operating Temperature-Min：-55 °C
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：APT5015BVRG
Package Shape：RECTANGULAR
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：5.29
Drain Current-Max (ID)：32 A
Packaging：Tube
Series：POWER MOS V®
JESD-609 Code：e1
Pbfree Code：Yes
ECCN Code：EAR99
Terminal Finish：Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Configuration：SINGLE WITH BUILT-IN DIODE
Number of Channels：1 Channel
Operating Mode：ENHANCEMENT MODE
Power Dissipation：370
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：150mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds：5280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：300 nC @ 10 V
Drain to Source Voltage (Vdss)：500 V
Polarity/Channel Type：N-CHANNEL
JEDEC-95 Code：TO-247
Drain-source On Resistance-Max：0.15 Ω
Pulsed Drain Current-Max (IDM)：128 A
DS Breakdown Voltage-Min：500 V
Channel Type：N
Avalanche Energy Rating (Eas)：1300 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-

在庫數 23

小計金額 $0.00000

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APT5015BVRG