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APT8065BVRG
-
Microchip Technology
-
Transistors - FETs, MOSFETs - Single
- TO-247-3
- MOSFET FG, MOSFET, 800V, TO-247, RoHSView in Development Tools Selector
Date Sheet
在庫數 23
小計金額 $0.00000
仕様 よくある質問
- Package / Case:TO-247-3
- Mounting Type:Through Hole
- Supplier Device Package:TO-247 [B]
- RoHS:Details
- Mounting Styles:Through Hole
- Transistor Polarity:N-Channel
- Vds - Drain-Source Breakdown Voltage:800 V
- Id - Continuous Drain Current:13 A
- Rds On - Drain-Source Resistance:650 mOhms
- Vgs - Gate-Source Voltage:- 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage:2 V
- Qg - Gate Charge:225 nC
- Minimum Operating Temperature:- 55 C
- Maximum Operating Temperature:+ 150 C
- Pd - Power Dissipation:280 W
- Channel Mode:Enhancement
- Factory Pack QuantityFactory Pack Quantity:1
- Unit Weight:0.211644 oz
- Continuous Drain Current Id:13
- Package:Tube
- Base Product Number:APT8065
- Current - Continuous Drain (Id) @ 25℃:13A (Tc)
- Mfr:Microchip Technology
- Product Status:Active
- Packaging:Tube
- Series:POWER MOS V®
- Configuration:Single
- Number of Channels:1 Channel
- FET Type:N-Channel
- Rds On (Max) @ Id, Vgs:650mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs:225 nC @ 10 V
- Drain to Source Voltage (Vdss):800 V
- Channel Type:N
- FET Feature:-
在庫數 23
小計金額 $0.00000











