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APT8065BVRG

在庫數 23

小計金額 $0.00000

仕様 よくある質問
  • Package / Case:TO-247-3
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247 [B]
  • RoHS:Details
  • Mounting Styles:Through Hole
  • Transistor Polarity:N-Channel
  • Vds - Drain-Source Breakdown Voltage:800 V
  • Id - Continuous Drain Current:13 A
  • Rds On - Drain-Source Resistance:650 mOhms
  • Vgs - Gate-Source Voltage:- 30 V, + 30 V
  • Vgs th - Gate-Source Threshold Voltage:2 V
  • Qg - Gate Charge:225 nC
  • Minimum Operating Temperature:- 55 C
  • Maximum Operating Temperature:+ 150 C
  • Pd - Power Dissipation:280 W
  • Channel Mode:Enhancement
  • Factory Pack QuantityFactory Pack Quantity:1
  • Unit Weight:0.211644 oz
  • Continuous Drain Current Id:13
  • Package:Tube
  • Base Product Number:APT8065
  • Current - Continuous Drain (Id) @ 25℃:13A (Tc)
  • Mfr:Microchip Technology
  • Product Status:Active
  • Packaging:Tube
  • Series:POWER MOS V®
  • Configuration:Single
  • Number of Channels:1 Channel
  • FET Type:N-Channel
  • Rds On (Max) @ Id, Vgs:650mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 25 V
  • Gate Charge (Qg) (Max) @ Vgs:225 nC @ 10 V
  • Drain to Source Voltage (Vdss):800 V
  • Channel Type:N
  • FET Feature:-

在庫數 23

小計金額 $0.00000