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APT50M75LLLG

在庫數 86

小計金額 $0.00000

仕様 よくある質問
  • Package / Case:TO-264-3
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-264 [L]
  • RoHS:Details
  • Mounting Styles:Through Hole
  • Transistor Polarity:N-Channel
  • Vds - Drain-Source Breakdown Voltage:500 V
  • Id - Continuous Drain Current:57 A
  • Rds On - Drain-Source Resistance:75 mOhms
  • Vgs - Gate-Source Voltage:- 30 V, + 30 V
  • Vgs th - Gate-Source Threshold Voltage:3 V
  • Qg - Gate Charge:125 nC
  • Minimum Operating Temperature:- 55 C
  • Maximum Operating Temperature:+ 150 C
  • Pd - Power Dissipation:570 W
  • Channel Mode:Enhancement
  • Fall Time:3 ns
  • Factory Pack QuantityFactory Pack Quantity:1
  • Typical Turn-Off Delay Time:21 ns
  • Typical Turn-On Delay Time:8 ns
  • Unit Weight:0.352740 oz
  • Package:Tube
  • Base Product Number:APT50M75
  • Current - Continuous Drain (Id) @ 25℃:57A (Tc)
  • Mfr:Microchip Technology
  • Product Status:Active
  • Packaging:Tube
  • Series:POWER MOS 7®
  • Configuration:Single
  • Number of Channels:1 Channel
  • FET Type:N-Channel
  • Rds On (Max) @ Id, Vgs:75mOhm @ 28.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Input Capacitance (Ciss) (Max) @ Vds:5590 pF @ 25 V
  • Gate Charge (Qg) (Max) @ Vgs:125 nC @ 10 V
  • Rise Time:19 ns
  • Drain to Source Voltage (Vdss):500 V
  • Transistor Type:1 N-Channel
  • FET Feature:-

在庫數 86

小計金額 $0.00000