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APT8M100B

在庫數 9000

小計金額 $0.00000

仕様 よくある質問
  • Package / Case:TO-247-3
  • RoHS:Details
  • Mounting Styles:Through Hole
  • Transistor Polarity:N-Channel
  • Vds - Drain-Source Breakdown Voltage:1 kV
  • Id - Continuous Drain Current:8 A
  • Rds On - Drain-Source Resistance:1.53 Ohms
  • Vgs - Gate-Source Voltage:- 30 V, + 30 V
  • Vgs th - Gate-Source Threshold Voltage:4 V
  • Qg - Gate Charge:60 nC
  • Minimum Operating Temperature:- 55 C
  • Maximum Operating Temperature:+ 150 C
  • Pd - Power Dissipation:290 W
  • Channel Mode:Enhancement
  • Tradename:Power MOS 8
  • Fall Time:7.2 ns
  • Forward Transconductance - Min:7.5 S
  • Factory Pack QuantityFactory Pack Quantity:1
  • Typical Turn-Off Delay Time:29 ns
  • Typical Turn-On Delay Time:8.5 ns
  • Unit Weight:0.211644 oz
  • Packaging:Tube
  • Configuration:Single
  • Number of Channels:1 Channel
  • Rise Time:7.8 ns
  • Height:5.31 mm
  • Length:21.46 mm
  • Width:16.26 mm

在庫數 9000

小計金額 $0.00000