APT38F80L

Microchip Technology
Transistors - FETs, MOSFETs - Single
TO-264-3
MOSFET FG, FREDFET, 800V, TO-264View in Development Tools Selector
Date Sheet

在庫數 48

小計金額 $0.00000

仕様よくある質問

Package / Case：TO-264-3
Mounting Type：Through Hole
Surface Mount：NO
Number of Pins：3
Supplier Device Package：TO-264 [L]
Number of Terminals：3
Transistor Element Material：SILICON
RoHS：Details
Mounting Styles：Through Hole
Transistor Polarity：N-Channel
Vds - Drain-Source Breakdown Voltage：800 V
Id - Continuous Drain Current：41 A
Rds On - Drain-Source Resistance：240 mOhms
Vgs - Gate-Source Voltage：- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage：4 V
Qg - Gate Charge：260 nC
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 150 C
Pd - Power Dissipation：1.04 kW
Channel Mode：Enhancement
Fall Time：60 ns
Forward Transconductance - Min：38 S
Factory Pack QuantityFactory Pack Quantity：1
Typical Turn-Off Delay Time：200 ns
Typical Turn-On Delay Time：46 ns
Unit Weight：0.352740 oz
Package：Tube
Base Product Number：APT38F80
Current - Continuous Drain (Id) @ 25℃：41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：Microchip Technology
Power Dissipation (Max)：1040W (Tc)
Product Status：Active
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 2.5mA
Package Description：ROHS COMPLIANT, T-MAX, 3 PIN
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：APT38F80L
Package Shape：RECTANGULAR
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：1.73
Part Package Code：TO-264AA
Drain Current-Max (ID)：22 A
Packaging：Tube
Operating Temperature：-55°C ~ 150°C (TJ)
Series：POWER MOS 8™
JESD-609 Code：e3
Pbfree Code：Yes
Terminal Finish：PURE MATTE TIN
Additional Feature：FAST SWITCHING, AVALANCHE RATED
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Configuration：Single
Number of Channels：1 Channel
Operating Mode：ENHANCEMENT MODE
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：240mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds：8070 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
Rise Time：65 ns
Drain to Source Voltage (Vdss)：800 V
Vgs (Max)：±30V
Polarity/Channel Type：N-CHANNEL
JEDEC-95 Code：TO-264AA
Drain Current-Max (Abs) (ID)：41 A
Drain-source On Resistance-Max：0.28 Ω
Pulsed Drain Current-Max (IDM)：150 A
DS Breakdown Voltage-Min：800 V
Avalanche Energy Rating (Eas)：1710 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)：1040 W
FET Feature：-
REACH SVHC：unknown

在庫數 48

小計金額 $0.00000

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APT38F80L