APT5016BLLG

Microchip Technology
Transistors - FETs, MOSFETs - Single
TO-247-3
MOSFET FG, MOSFET, 500V, TO-247, RoHSView in Development Tools Selector
Date Sheet

在庫數 49

小計金額 $0.00000

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Package / Case：TO-247-3
Mounting Type：Through Hole
Surface Mount：NO
Number of Pins：3
Supplier Device Package：TO-247 [B]
Number of Terminals：3
Transistor Element Material：SILICON
RoHS：Details
Mounting Styles：Through Hole
Transistor Polarity：N-Channel
Vds - Drain-Source Breakdown Voltage：500 V
Id - Continuous Drain Current：30 A
Rds On - Drain-Source Resistance：160 mOhms
Vgs - Gate-Source Voltage：- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage：3 V
Qg - Gate Charge：72 nC
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 150 C
Pd - Power Dissipation：329 W
Channel Mode：Enhancement
Fall Time：14 ns
Factory Pack QuantityFactory Pack Quantity：1
Typical Turn-Off Delay Time：27 ns
Typical Turn-On Delay Time：10 ns
Unit Weight：0.211644 oz
Continuous Drain Current Id：30
Package：Tube
Base Product Number：APT5016
Current - Continuous Drain (Id) @ 25℃：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：Microchip Technology
Power Dissipation (Max)：329W (Tc)
Product Status：Active
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 1mA
Package Description：FLANGE MOUNT, R-PSFM-T3
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：APT5016BLLG
Package Shape：RECTANGULAR
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：5.11
Part Package Code：TO-247AD
Drain Current-Max (ID)：30 A
Packaging：Tube
Series：APT5016
Operating Temperature：-55°C ~ 150°C (TJ)
JESD-609 Code：e1
Pbfree Code：Yes
ECCN Code：EAR99
Terminal Finish：TIN SILVER COPPER
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Configuration：Single
Number of Channels：1 Channel
Operating Mode：ENHANCEMENT MODE
Power Dissipation：329
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：160mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds：2833 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
Rise Time：10 ns
Drain to Source Voltage (Vdss)：500 V
Vgs (Max)：±30V
Polarity/Channel Type：N-CHANNEL
Transistor Type：1 N-Channel
JEDEC-95 Code：TO-247AD
Drain-source On Resistance-Max：0.16 Ω
Pulsed Drain Current-Max (IDM)：120 A
DS Breakdown Voltage-Min：500 V
Channel Type：N
Avalanche Energy Rating (Eas)：1300 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-
REACH SVHC：compliant

在庫數 49

小計金額 $0.00000

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APT5016BLLG