2N930

Microchip Technology
Transistors - Bipolar (BJT) - Single
TO-18-3
Bipolar Transistors - BJT BJTs
Date Sheet

在庫數 133

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：Production (Last Updated: 2 months ago)
Package / Case：TO-18-3
Mounting Type：Through Hole
Contact Plating：Lead, Tin
Mount：Through Hole
Number of Pins：3
Supplier Device Package：TO-18 (TO-206AA)
RoHS：N
Mounting Styles：Through Hole
Transistor Polarity：NPN
Collector- Emitter Voltage VCEO Max：45 V
Emitter- Base Voltage VEBO：6 V
Collector-Emitter Saturation Voltage：1 V
Maximum DC Collector Current：30 mA
Pd - Power Dissipation：300 mW
Gain Bandwidth Product fT：-
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 200 C
Factory Pack QuantityFactory Pack Quantity：1
Unit Weight：0.052399 oz
Package：Bulk
Current-Collector (Ic) (Max)：30 mA
Base Product Number：2N930
Mfr：Microchip Technology
Product Status：Active
Schedule B：8541210080
Collector-Emitter Breakdown Voltage：45 V
Number of Elements：1
Packaging：Bulk
Operating Temperature：-55°C ~ 200°C (TJ)
Series：-
Max Operating Temperature：200 °C
Min Operating Temperature：-55 °C
Max Power Dissipation：300 mW
Polarity：NPN
Configuration：Single
Power Dissipation：300 mW
Power - Max：300 mW
Transistor Type：NPN
Collector Emitter Voltage (VCEO)：45 V
Max Collector Current：30 mA
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10µA, 5V
Current - Collector Cutoff (Max)：2nA
Vce Saturation (Max) @ Ib, Ic：1V @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Frequency - Transition：-
Collector Base Voltage (VCBO)：60 V
Emitter Base Voltage (VEBO)：6 V
Continuous Collector Current：30
Radiation Hardening：No

在庫數 133

小計金額 $0.00000

Phone

2N930