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MSC060SMA070S
-
Microchip Technology
-
Transistors - FETs, MOSFETs - Single
- D3PAK-3
- MOSFET UNRLS, FG, SIC MOSFET, TO-268View in Development Tools Selector
Date Sheet
在庫數 16500
小計金額 $0.00000
仕様 よくある質問
- Package / Case：D3PAK-3
- Mounting Type：Surface Mount
- Supplier Device Package：D3PAK
- RoHS：Details
- Mounting Styles：SMD/SMT
- Transistor Polarity：N-Channel
- Vds - Drain-Source Breakdown Voltage：700 V
- Id - Continuous Drain Current：37 A
- Rds On - Drain-Source Resistance：69 mOhms
- Vgs - Gate-Source Voltage：- 10 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage：1.9 V
- Qg - Gate Charge：56 nC
- Minimum Operating Temperature：- 55 C
- Maximum Operating Temperature：+ 175 C
- Pd - Power Dissipation：130 W
- Channel Mode：Enhancement
- Factory Pack QuantityFactory Pack Quantity：1
- Unit Weight：0.218699 oz
- Continuous Drain Current Id：37
- Package：Tube
- Base Product Number：MSC060
- Current - Continuous Drain (Id) @ 25℃：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Mfr：Microchip Technology
- Power Dissipation (Max)：130W (Tc)
- Product Status：Active
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.4V @ 1mA
- Packaging：Tube
- Operating Temperature：-55°C ~ 175°C (TJ)
- Series：-
- Part Status：Production (Last Updated: 2 months ago)
- Configuration：Single
- Number of Channels：1 Channel
- Power Dissipation：130
- FET Type：N-Channel
- Rds On (Max) @ Id, Vgs：75mOhm @ 20A, 20V
- Input Capacitance (Ciss) (Max) @ Vds：1175 pF @ 700 V
- Gate Charge (Qg) (Max) @ Vgs：56 nC @ 20 V
- Drain to Source Voltage (Vdss)：700 V
- Vgs (Max)：+23V, -10V
- FET Feature：-
在庫數 16500
小計金額 $0.00000
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