2N3419

Microchip Technology
Transistors - Bipolar (BJT) - Single
TO-5-3
Bipolar Transistors - BJT Power BJT
Date Sheet

在庫數 9

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：Production (Last Updated: 2 months ago)
Package / Case：TO-5-3
Mounting Type：Through Hole
Mount：Through Hole
Surface Mount：NO
Number of Pins：3
Supplier Device Package：TO-5
Number of Terminals：3
Transistor Element Material：SILICON
Factory Pack QuantityFactory Pack Quantity：1
DC Current Gain hFE Max：60 at 1 A, 2 V
DC Collector/Base Gain hfe Min：20 at 1 A, 2 V
Maximum Operating Temperature：+ 200 C
Minimum Operating Temperature：- 65 C
Gain Bandwidth Product fT：-
Pd - Power Dissipation：1 W
Maximum DC Collector Current：3 A
Collector-Emitter Saturation Voltage：500 mV
Emitter- Base Voltage VEBO：8 V
Collector- Emitter Voltage VCEO Max：80 V
Transistor Polarity：NPN
Mounting Styles：Through Hole
RoHS：N
Package：Bulk
Current-Collector (Ic) (Max)：3 A
Base Product Number：2N3419
Product Status：Active
Mfr：Microchip Technology
Power Dissipation (Max)：1 W
Package Description：CYLINDRICAL, O-MBCY-W3
Package Style：CYLINDRICAL
Package Body Material：METAL
Reflow Temperature-Max (s)：NOT SPECIFIED
Rohs Code：No
Manufacturer Part Number：2N3419
Turn-on Time-Max (ton)：300 ns
Package Shape：ROUND
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Turn-off Time-Max (toff)：1300 ns
Risk Rank：5.12
Packaging：Bulk
Operating Temperature：-65°C ~ 200°C (TJ)
Series：-
JESD-609 Code：e0
Pbfree Code：No
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
Max Operating Temperature：200 °C
Min Operating Temperature：-65 °C
Terminal Position：BOTTOM
Terminal Form：WIRE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
JESD-30 Code：O-MBCY-W3
Qualification Status：Not Qualified
Configuration：Single
Power - Max：1 W
Polarity/Channel Type：NPN
Transistor Type：NPN
Collector Emitter Voltage (VCEO)：80 V
Max Collector Current：3 A
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 1A, 2V
Current - Collector Cutoff (Max)：5µA
JEDEC-95 Code：TO-5
Vce Saturation (Max) @ Ib, Ic：500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)：80 V
Frequency - Transition：-
Collector Base Voltage (VCBO)：125 V
Collector Current-Max (IC)：3 A
DC Current Gain-Min (hFE)：10
Collector-Emitter Voltage-Max：80 V
Radiation Hardening：No

在庫數 9

小計金額 $0.00000

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2N3419