2N5666

Microchip Technology
Transistors - Bipolar (BJT) - Single
TO-205AA, TO-5-3 Metal Can
Bipolar Transistors - BJT Power BJT
Date Sheet

在庫數 9

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：Production (Last Updated: 1 month ago)
Contact Plating：Lead, Tin
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-205AA, TO-5-3 Metal Can
Surface Mount：NO
Number of Pins：3
Supplier Device Package：TO-5
Number of Terminals：3
Transistor Element Material：SILICON
RoHS：N
Mounting Styles：Through Hole
Transistor Polarity：NPN
Collector- Emitter Voltage VCEO Max：300 V
Emitter- Base Voltage VEBO：6 V
Collector-Emitter Saturation Voltage：400 mV
Maximum DC Collector Current：5 A
Pd - Power Dissipation：1.2 W
Gain Bandwidth Product fT：-
Minimum Operating Temperature：- 65 C
Maximum Operating Temperature：+ 200 C
Factory Pack QuantityFactory Pack Quantity：1
Unit Weight：0.097719 oz
Emitter-Base Voltage：6(V)
Package Type：TO-5
Collector-Base Voltage：250(V)
Category：Bipolar Power
Operating Temp Range：-65C to 200C
Collector Current (DC)：5(A)
Number of Elements：1
Rad Hardened：No
DC Current Gain：5
Mounting：Through Hole
Schedule B：8541290080, 8541290080/8541290080, 8541290080/8541290080/8541290080, 8541290080/8541290080/8541290080/8541290080
Package：Bulk
Current-Collector (Ic) (Max)：5 A
Base Product Number：2N5666
Mfr：Microchip Technology
Product Status：Active
Package Description：HERMETIC SEALED, METAL CAN-3
Package Style：CYLINDRICAL
Package Body Material：METAL
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：200 °C
Rohs Code：No
Transition Frequency-Nom (fT)：20 MHz
Manufacturer Part Number：2N5666
Package Shape：ROUND
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：5.01
Packaging：Bulk
Operating Temperature：-65°C ~ 200°C (TJ)
Series：-
JESD-609 Code：e0
Pbfree Code：No
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
Max Operating Temperature：200 °C
Min Operating Temperature：-65 °C
HTS Code：8541.29.00.95
Max Power Dissipation：1.2 W
Terminal Position：BOTTOM
Terminal Form：WIRE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Pin Count：3
JESD-30 Code：O-MBCY-W3
Qualification Status：Not Qualified
Polarity：NPN
Configuration：Single
Power Dissipation：2.5
Output Power：Not Required(W)
Power - Max：1.2 W
Transistor Application：SWITCHING
Polarity/Channel Type：NPN
Transistor Type：NPN
Collector Emitter Voltage (VCEO)：200 V
Max Collector Current：5 A
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 1A, 5V
Current - Collector Cutoff (Max)：200nA
JEDEC-95 Code：TO-5
Vce Saturation (Max) @ Ib, Ic：1V @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max)：200 V
Frequency - Transition：-
Collector Base Voltage (VCBO)：250 V
Power Dissipation-Max (Abs)：15 W
Emitter Base Voltage (VEBO)：6 V
Collector Current-Max (IC)：5 A
DC Current Gain-Min (hFE)：5
Continuous Collector Current：5
Collector-Emitter Voltage-Max：200 V

在庫數 9

小計金額 $0.00000

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2N5666