2N1483

Microchip Technology
Transistors - Bipolar (BJT) - Single
TO-8-3
Bipolar Transistors - BJT Power BJT
Date Sheet

在庫數 8

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：Production (Last Updated: 2 months ago)
Package / Case：TO-8-3
Mounting Type：Through Hole
Mount：Through Hole
Surface Mount：NO
Number of Pins：3
Supplier Device Package：TO-8
Number of Terminals：3
Transistor Element Material：SILICON
RoHS：N
Mounting Styles：Through Hole
Factory Pack QuantityFactory Pack Quantity：1
Package：Bulk
Current-Collector (Ic) (Max)：3 A
Product Status：Active
Mfr：Microchip Technology
Base Product Number：2N1483
Power Dissipation (Max)：1.75 W
Package Style：CYLINDRICAL
Package Body Material：METAL
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：200 °C
Rohs Code：No
Manufacturer Part Number：2N1483
Package Shape：ROUND
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：5.14
Packaging：Tray
Operating Temperature：-65°C ~ 200°C (TJ)
Series：-
JESD-609 Code：e0
Pbfree Code：No
ECCN Code：EAR99
Terminal Finish：TIN LEAD
Max Operating Temperature：200 °C
Min Operating Temperature：-65 °C
HTS Code：8541.29.00.95
Terminal Position：BOTTOM
Terminal Form：WIRE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：unknown
JESD-30 Code：O-MBCY-W3
Qualification Status：Not Qualified
Configuration：SINGLE
Power - Max：1.75 W
Polarity/Channel Type：NPN
Transistor Type：NPN
Collector Emitter Voltage (VCEO)：40 V
Max Collector Current：3 A
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 750mA, 4V
Current - Collector Cutoff (Max)：15µA
JEDEC-95 Code：TO-8
Vce Saturation (Max) @ Ib, Ic：1.20V @ 75mA, 750A
Voltage - Collector Emitter Breakdown (Max)：40 V
Frequency - Transition：-
Collector Base Voltage (VCBO)：60 V
Collector Current-Max (IC)：3 A
DC Current Gain-Min (hFE)：20
Collector-Emitter Voltage-Max：40 V
Radiation Hardening：No

在庫數 8

小計金額 $0.00000

Phone

2N1483