2N5430

Microchip Technology
Transistors - Bipolar (BJT) - Single
TO-66-2
Bipolar Transistors - BJT Power BJT
Date Sheet

在庫數 28

小計金額 $0.00000

仕様よくある質問

Package / Case：TO-66-2
Mount：Through Hole
Surface Mount：NO
Number of Pins：3
Number of Terminals：2
Transistor Element Material：SILICON
Unit Weight：0.283074 oz
Factory Pack QuantityFactory Pack Quantity：1
Maximum Operating Temperature：+ 200 C
Minimum Operating Temperature：- 65 C
Gain Bandwidth Product fT：-
Pd - Power Dissipation：40 W
Maximum DC Collector Current：7 A
Collector-Emitter Saturation Voltage：700 mV
Emitter- Base Voltage VEBO：6 V
Collector- Emitter Voltage VCEO Max：100 V
Transistor Polarity：NPN
Mounting Styles：Through Hole
RoHS：N
Package：Bulk
Base Product Number：2N5430
Mfr：Microchip Technology
Product Status：Active
Power Dissipation (Max)：40 W
Package Description：FLANGE MOUNT, O-MBFM-P2
Package Style：FLANGE MOUNT
Package Body Material：METAL
Reflow Temperature-Max (s)：NOT SPECIFIED
Rohs Code：No
Manufacturer Part Number：2N5430
Package Shape：ROUND
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：5.18
Part Package Code：TO-66
Packaging：Tray
Series：*
JESD-609 Code：e0
Pbfree Code：No
ECCN Code：EAR99
Terminal Finish：TIN/LEAD (SN/PB)
HTS Code：8541.29.00.95
Terminal Position：BOTTOM
Terminal Form：PIN/PEG
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
JESD-30 Code：O-MBFM-P2
Qualification Status：Not Qualified
Configuration：Single
Power Dissipation：40
Polarity/Channel Type：NPN
Collector Emitter Voltage (VCEO)：100 V
Max Collector Current：7 A
JEDEC-95 Code：TO-66
Collector Base Voltage (VCBO)：100 V
Collector Current-Max (IC)：7 A
DC Current Gain-Min (hFE)：60
Continuous Collector Current：7
Collector-Emitter Voltage-Max：100 V
Radiation Hardening：No

在庫數 28

小計金額 $0.00000

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2N5430