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2N3501UB

在庫數 170

小計金額 $0.00000

仕様 よくある質問
  • Surface Mount:YES
  • Package / Case:SMD-4
  • Mounting Type:Surface Mount
  • Supplier Device Package:UB
  • Number of Terminals:3
  • Transistor Element Material:SILICON
  • Manufacturer Part Number:2N3501UB
  • Rohs Code:No
  • Part Life Cycle Code:Active
  • Ihs Manufacturer:MICROSEMI CORP
  • Package Description:SMALL OUTLINE, R-CDSO-N3
  • Risk Rank:5.1
  • Number of Elements:1
  • Operating Temperature-Max:200 °C
  • Package Body Material:CERAMIC, METAL-SEALED COFIRED
  • Package Shape:RECTANGULAR
  • Package Style:SMALL OUTLINE
  • Reflow Temperature-Max (s):NOT SPECIFIED
  • Transistor Polarity:NPN
  • Emitter- Base Voltage VEBO:6 V
  • Pd - Power Dissipation:500 mW
  • Maximum Operating Temperature:+ 200 C
  • Collector-Emitter Saturation Voltage:400 mV
  • Unit Weight:0.057223 oz
  • Minimum Operating Temperature:- 65 C
  • Factory Pack QuantityFactory Pack Quantity:1
  • Mounting Styles:SMD/SMT
  • Gain Bandwidth Product fT:-
  • Brand:Microchip Technology / Atmel
  • Maximum DC Collector Current:300 mA
  • RoHS:N
  • Collector- Emitter Voltage VCEO Max:150 V
  • Package:Bulk
  • Current-Collector (Ic) (Max):300 mA
  • Base Product Number:2N3501
  • Mfr:Microchip Technology
  • Product Status:Active
  • Packaging:Waffle
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Series:Military, MIL-PRF-19500/366
  • JESD-609 Code:e0
  • ECCN Code:EAR99
  • Terminal Finish:Tin/Lead (Sn/Pb)
  • HTS Code:8541.21.00.95
  • Technology:Si
  • Terminal Position:DUAL
  • Terminal Form:NO LEAD
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Reach Compliance Code:compliant
  • JESD-30 Code:R-CDSO-N3
  • Qualification Status:Not Qualified
  • Configuration:SINGLE
  • Power - Max:500 mW
  • Polarity/Channel Type:NPN
  • Product Type:BJTs - Bipolar Transistors
  • Transistor Type:NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 15mA, 150mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Frequency - Transition:-
  • Collector Base Voltage (VCBO):150 V
  • Power Dissipation-Max (Abs):0.5 W
  • Collector Current-Max (IC):0.3 A
  • DC Current Gain-Min (hFE):20
  • Continuous Collector Current:300
  • Collector-Emitter Voltage-Max:150 V
  • Product Category:Bipolar Transistors - BJT

在庫數 170

小計金額 $0.00000