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2N3501UB
-
Microchip
-
Integrated Circuits (ICs)
- SMD-4
- Bipolar (BJT) Transistor NPN 150V 300mA 500mW Surface Mount UB
Date Sheet
在庫數 170
小計金額 $0.00000
仕様 よくある質問
- Surface Mount:YES
- Package / Case:SMD-4
- Mounting Type:Surface Mount
- Supplier Device Package:UB
- Number of Terminals:3
- Transistor Element Material:SILICON
- Manufacturer Part Number:2N3501UB
- Rohs Code:No
- Part Life Cycle Code:Active
- Ihs Manufacturer:MICROSEMI CORP
- Package Description:SMALL OUTLINE, R-CDSO-N3
- Risk Rank:5.1
- Number of Elements:1
- Operating Temperature-Max:200 °C
- Package Body Material:CERAMIC, METAL-SEALED COFIRED
- Package Shape:RECTANGULAR
- Package Style:SMALL OUTLINE
- Reflow Temperature-Max (s):NOT SPECIFIED
- Transistor Polarity:NPN
- Emitter- Base Voltage VEBO:6 V
- Pd - Power Dissipation:500 mW
- Maximum Operating Temperature:+ 200 C
- Collector-Emitter Saturation Voltage:400 mV
- Unit Weight:0.057223 oz
- Minimum Operating Temperature:- 65 C
- Factory Pack QuantityFactory Pack Quantity:1
- Mounting Styles:SMD/SMT
- Gain Bandwidth Product fT:-
- Brand:Microchip Technology / Atmel
- Maximum DC Collector Current:300 mA
- RoHS:N
- Collector- Emitter Voltage VCEO Max:150 V
- Package:Bulk
- Current-Collector (Ic) (Max):300 mA
- Base Product Number:2N3501
- Mfr:Microchip Technology
- Product Status:Active
- Packaging:Waffle
- Operating Temperature:-65°C ~ 200°C (TJ)
- Series:Military, MIL-PRF-19500/366
- JESD-609 Code:e0
- ECCN Code:EAR99
- Terminal Finish:Tin/Lead (Sn/Pb)
- HTS Code:8541.21.00.95
- Technology:Si
- Terminal Position:DUAL
- Terminal Form:NO LEAD
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:compliant
- JESD-30 Code:R-CDSO-N3
- Qualification Status:Not Qualified
- Configuration:SINGLE
- Power - Max:500 mW
- Polarity/Channel Type:NPN
- Product Type:BJTs - Bipolar Transistors
- Transistor Type:NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
- Current - Collector Cutoff (Max):10µA (ICBO)
- Vce Saturation (Max) @ Ib, Ic:400mV @ 15mA, 150mA
- Voltage - Collector Emitter Breakdown (Max):150 V
- Frequency - Transition:-
- Collector Base Voltage (VCBO):150 V
- Power Dissipation-Max (Abs):0.5 W
- Collector Current-Max (IC):0.3 A
- DC Current Gain-Min (hFE):20
- Continuous Collector Current:300
- Collector-Emitter Voltage-Max:150 V
- Product Category:Bipolar Transistors - BJT
在庫數 170
小計金額 $0.00000











