2N3867

Microchip
Integrated Circuits (ICs)
Trans GP BJT PNP 40V 3A 3-Pin TO-5
Date Sheet

在庫數 21

1+： $9.20375
10+： $8.68278
100+： $8.19130
500+： $7.72764
1000+： $7.29023

小計金額 $9.20375

仕様よくある質問

Lifecycle Status：Production (Last Updated: 2 months ago)
Surface Mount：NO
Mounting Type：Through Hole
Mount：Through Hole
Number of Pins：3
Supplier Device Package：TO-5
Number of Terminals：3
Transistor Element Material：SILICON
Manufacturer Part Number：2N3867
Rohs Code：No
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Package Description：TO-5, 3 PIN
Risk Rank：5.1
Number of Elements：1
Operating Temperature-Max：200 °C
Package Body Material：METAL
Package Shape：ROUND
Package Style：CYLINDRICAL
Reflow Temperature-Max (s)：NOT SPECIFIED
Transition Frequency-Nom (fT)：60 MHz
Turn-off Time-Max (toff)：600 ns
Turn-on Time-Max (ton)：100 ns
Transistor Polarity：PNP
Package：Bulk
Current-Collector (Ic) (Max)：3 mA
Base Product Number：2N3867
Mfr：Microchip Technology
Product Status：Active
Factory Pack QuantityFactory Pack Quantity：1
Brand：Microchip Technology
RoHS：N
Operating Temperature：-65°C ~ 200°C (TJ)
Series：-
Packaging：Bulk
JESD-609 Code：e0
Pbfree Code：No
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
Max Operating Temperature：200 °C
Min Operating Temperature：-55 °C
Additional Feature：HIGH RELIABILITY
HTS Code：8541.29.00.75
Max Power Dissipation：1 W
Technology：Si
Terminal Position：BOTTOM
Terminal Form：WIRE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：unknown
JESD-30 Code：O-MBCY-W3
Qualification Status：Not Qualified
Configuration：SINGLE
Power Dissipation：10
Power - Max：1 W
Transistor Application：SWITCHING
Polarity/Channel Type：PNP
Product Type：BJTs - Bipolar Transistors
Transistor Type：PNP
Collector Emitter Voltage (VCEO)：40 V
Max Collector Current：3 A
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 1.5A, 2V
Current - Collector Cutoff (Max)：100µA (ICBO)
JEDEC-95 Code：TO-5
Vce Saturation (Max) @ Ib, Ic：1.5V @ 250mA, 2.5A
Voltage - Collector Emitter Breakdown (Max)：40 V
Frequency - Transition：-
Collector Base Voltage (VCBO)：40 V
Power Dissipation-Max (Abs)：1 W
Collector Current-Max (IC)：3 A
DC Current Gain-Min (hFE)：20
Continuous Collector Current：3
Collector-Emitter Voltage-Max：40 V
Product Category：Bipolar Transistors - BJT
Radiation Hardening：No

在庫數 21

1+： $9.20375
10+： $8.68278
100+： $8.19130
500+： $7.72764
1000+： $7.29023

小計金額 $9.20375

Phone

2N3867