画像はあくまで参考です。
JAN2N5154
-
Microchip
-
Integrated Circuits (ICs)
- TO-205AD, TO-39-3 Metal Can
- Trans GP BJT NPN 80V 2A 1000mW 3-Pin TO-39 Bag
Date Sheet
在庫數 17
小計金額 $0.00000
仕様 よくある質問
- Surface Mount:NO
- Mounting Type:Through Hole
- Package / Case:TO-205AD, TO-39-3 Metal Can
- Supplier Device Package:TO-39 (TO-205AD)
- Number of Terminals:3
- Transistor Element Material:SILICON
- Package Style:CYLINDRICAL
- Package Shape:ROUND
- Package Body Material:METAL
- Risk Rank:5.18
- Package Description:TO-5, 3 PIN
- Ihs Manufacturer:MICROSEMI CORP
- Part Life Cycle Code:Active
- Rohs Code:No
- Manufacturer Part Number:JAN2N5154
- Package:Bulk
- Current-Collector (Ic) (Max):2 A
- Mfr:Microchip Technology
- Product Status:Discontinued at Digi-Key
- Operating Temperature:-65°C ~ 200°C (TJ)
- Series:Military, MIL-PRF-19500/544
- JESD-609 Code:e0
- ECCN Code:EAR99
- Terminal Finish:Tin/Lead (Sn/Pb)
- HTS Code:8541.29.00.95
- Terminal Position:BOTTOM
- Terminal Form:WIRE
- Reach Compliance Code:compliant
- Reference Standard:MIL
- JESD-30 Code:O-MBCY-W3
- Qualification Status:Qualified
- Power - Max:1 W
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 2.5A, 5V
- Current - Collector Cutoff (Max):50µA
- JEDEC-95 Code:TO-5
- Vce Saturation (Max) @ Ib, Ic:1.5V @ 500mA, 5A
- Voltage - Collector Emitter Breakdown (Max):80 V
- Frequency - Transition:-
- Collector Current-Max (IC):2 A
- DC Current Gain-Min (hFE):70
- Collector-Emitter Voltage-Max:80 V
在庫數 17
小計金額 $0.00000











