画像はあくまで参考です。
在庫數 0
小計金額 $0.00000
仕様 よくある質問
- Surface Mount:YES
- Number of Terminals:2
- Transistor Element Material:SILICON
- Manufacturer Part Number:FQB65N06
- Rohs Code:No
- Part Life Cycle Code:Obsolete
- Ihs Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
- Part Package Code:TO-263
- Package Description:SMALL OUTLINE, R-PSSO-G2
- Risk Rank:5.37
- Drain Current-Max (ID):65 A
- Number of Elements:1
- Operating Temperature-Max:175 °C
- Package Body Material:PLASTIC/EPOXY
- Package Shape:RECTANGULAR
- Package Style:SMALL OUTLINE
- Reflow Temperature-Max (s):NOT SPECIFIED
- JESD-609 Code:e0
- ECCN Code:EAR99
- Terminal Finish:Tin/Lead (Sn/Pb)
- Terminal Position:SINGLE
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:unknown
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Case Connection:DRAIN
- Transistor Application:SWITCHING
- Polarity/Channel Type:N-CHANNEL
- JEDEC-95 Code:TO-263AB
- Drain Current-Max (Abs) (ID):65 A
- Drain-source On Resistance-Max:0.016 Ω
- Pulsed Drain Current-Max (IDM):260 A
- DS Breakdown Voltage-Min:60 V
- Avalanche Energy Rating (Eas):650 mJ
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs):150 W
在庫數 0
小計金額 $0.00000











