JANS2N3635UB

Microchip
Integrated Circuits (ICs)
4-SMD, No Lead
Trans GP BJT PNP 140V 1A 3-Pin UB
Date Sheet

在庫數 14

小計金額 $0.00000

仕様よくある質問

Surface Mount：YES
Mounting Type：Surface Mount
Package / Case：4-SMD, No Lead
Supplier Device Package：UB
Number of Terminals：3
Transistor Element Material：SILICON
Manufacturer Part Number：JANS2N3635UB
Rohs Code：No
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Package Description：SMALL OUTLINE, R-CDSO-N3
Risk Rank：5.52
Number of Elements：1
Operating Temperature-Max：200 °C
Package Body Material：CERAMIC, METAL-SEALED COFIRED
Package Shape：RECTANGULAR
Package Style：SMALL OUTLINE
Reflow Temperature-Max (s)：NOT SPECIFIED
Turn-off Time-Max (toff)：650 ns
Turn-on Time-Max (ton)：200 ns
Transistor Polarity：PNP
Package：Bulk
Current-Collector (Ic) (Max)：10 µA
Mfr：Microchip Technology
Product Status：Active
Factory Pack QuantityFactory Pack Quantity：1
Brand：Microchip / Microsemi
RoHS：N
Operating Temperature：-65°C ~ 200°C (TJ)
Series：Military, MIL-PRF-19500/357
Packaging：Waffle
JESD-609 Code：e0
Pbfree Code：No
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
HTS Code：8541.29.00.95
Technology：Si
Terminal Position：DUAL
Terminal Form：NO LEAD
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
Pin Count：3
Reference Standard：MIL-19500/357
JESD-30 Code：R-CDSO-N3
Qualification Status：Qualified
Configuration：SINGLE
Power - Max：1.5 W
Transistor Application：SWITCHING
Polarity/Channel Type：PNP
Product Type：BJTs - Bipolar Transistors
Transistor Type：PNP
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 10V
Current - Collector Cutoff (Max)：10µA
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)：140 V
Frequency - Transition：-
Power Dissipation-Max (Abs)：1 W
Collector Current-Max (IC)：1 A
DC Current Gain-Min (hFE)：60
Continuous Collector Current：1
Collector-Emitter Voltage-Max：140 V
Product Category：Bipolar Transistors - BJT

在庫數 14

小計金額 $0.00000

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JANS2N3635UB