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在庫數 33

小計金額 $0.00000

仕様 よくある質問
  • Package / Case:TO-78-6 Metal Can
  • Mounting Type:Through Hole
  • Surface Mount:NO
  • Supplier Device Package:TO-78-6
  • Number of Terminals:8
  • Transistor Element Material:SILICON
  • Package:Bulk
  • Current-Collector (Ic) (Max):600mA
  • Base Product Number:2N579
  • Mfr:Microchip Technology
  • Product Status:Active
  • Transistor Polarity:NPN
  • Factory Pack QuantityFactory Pack Quantity:1
  • Manufacturer:Microchip
  • Brand:Microchip Technology / Atmel
  • RoHS:Details
  • Package Description:HERMETIC SEALED, METAL PACKAGE-8
  • Package Style:CYLINDRICAL
  • Package Body Material:METAL
  • Operating Temperature-Min:-65 °C
  • Reflow Temperature-Max (s):NOT SPECIFIED
  • Operating Temperature-Max:200 °C
  • Rohs Code:No
  • Transition Frequency-Nom (fT):250 MHz
  • Manufacturer Part Number:2N5794
  • Turn-on Time-Max (ton):40 ns
  • Package Shape:ROUND
  • Number of Elements:2
  • Part Life Cycle Code:Obsolete
  • Ihs Manufacturer:CENTRAL SEMICONDUCTOR CORP
  • Turn-off Time-Max (toff):300 ns
  • Risk Rank:5.2
  • Part Package Code:TO-78
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Series:-
  • Packaging:Bulk
  • JESD-609 Code:e0
  • Pbfree Code:No
  • ECCN Code:EAR99
  • Terminal Finish:Tin/Lead (Sn/Pb)
  • HTS Code:8541.21.00.75
  • Subcategory:Transistors
  • Technology:Si
  • Terminal Position:BOTTOM
  • Terminal Form:WIRE
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Reach Compliance Code:unknown
  • Pin Count:8
  • JESD-30 Code:O-MBCY-W8
  • Qualification Status:Not Qualified
  • Configuration:SEPARATE, 2 ELEMENTS
  • Power - Max:600mW
  • Transistor Application:AMPLIFIER
  • Polarity/Channel Type:NPN
  • Product Type:BJTs - Bipolar Transistors
  • Transistor Type:2 NPN (Dual)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • JEDEC-95 Code:TO-78
  • Vce Saturation (Max) @ Ib, Ic:900mV @ 30mA, 300mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Frequency - Transition:-
  • Power Dissipation-Max (Abs):2 W
  • Collector Current-Max (IC):0.6 A
  • DC Current Gain-Min (hFE):40
  • Collector-Emitter Voltage-Max:40 V
  • VCEsat-Max:0.9 V
  • Collector-Base Capacitance-Max:8 pF
  • Power Dissipation Ambient-Max:0.6 W
  • Product Category:Bipolar Transistors - BJT

在庫數 33

小計金額 $0.00000