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2N5794
-
Microchip
-
Transistors - Bipolar (BJT) - Arrays
- TO-78-6 Metal Can
- NPN TRANSISTOR
Date Sheet
在庫數 33
小計金額 $0.00000
仕様 よくある質問
- Package / Case:TO-78-6 Metal Can
- Mounting Type:Through Hole
- Surface Mount:NO
- Supplier Device Package:TO-78-6
- Number of Terminals:8
- Transistor Element Material:SILICON
- Package:Bulk
- Current-Collector (Ic) (Max):600mA
- Base Product Number:2N579
- Mfr:Microchip Technology
- Product Status:Active
- Transistor Polarity:NPN
- Factory Pack QuantityFactory Pack Quantity:1
- Manufacturer:Microchip
- Brand:Microchip Technology / Atmel
- RoHS:Details
- Package Description:HERMETIC SEALED, METAL PACKAGE-8
- Package Style:CYLINDRICAL
- Package Body Material:METAL
- Operating Temperature-Min:-65 °C
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:200 °C
- Rohs Code:No
- Transition Frequency-Nom (fT):250 MHz
- Manufacturer Part Number:2N5794
- Turn-on Time-Max (ton):40 ns
- Package Shape:ROUND
- Number of Elements:2
- Part Life Cycle Code:Obsolete
- Ihs Manufacturer:CENTRAL SEMICONDUCTOR CORP
- Turn-off Time-Max (toff):300 ns
- Risk Rank:5.2
- Part Package Code:TO-78
- Operating Temperature:-65°C ~ 200°C (TJ)
- Series:-
- Packaging:Bulk
- JESD-609 Code:e0
- Pbfree Code:No
- ECCN Code:EAR99
- Terminal Finish:Tin/Lead (Sn/Pb)
- HTS Code:8541.21.00.75
- Subcategory:Transistors
- Technology:Si
- Terminal Position:BOTTOM
- Terminal Form:WIRE
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:unknown
- Pin Count:8
- JESD-30 Code:O-MBCY-W8
- Qualification Status:Not Qualified
- Configuration:SEPARATE, 2 ELEMENTS
- Power - Max:600mW
- Transistor Application:AMPLIFIER
- Polarity/Channel Type:NPN
- Product Type:BJTs - Bipolar Transistors
- Transistor Type:2 NPN (Dual)
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
- Current - Collector Cutoff (Max):10µA (ICBO)
- JEDEC-95 Code:TO-78
- Vce Saturation (Max) @ Ib, Ic:900mV @ 30mA, 300mA
- Voltage - Collector Emitter Breakdown (Max):40V
- Frequency - Transition:-
- Power Dissipation-Max (Abs):2 W
- Collector Current-Max (IC):0.6 A
- DC Current Gain-Min (hFE):40
- Collector-Emitter Voltage-Max:40 V
- VCEsat-Max:0.9 V
- Collector-Base Capacitance-Max:8 pF
- Power Dissipation Ambient-Max:0.6 W
- Product Category:Bipolar Transistors - BJT
在庫數 33
小計金額 $0.00000











