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2N2219A

在庫數 33

小計金額 $0.00000

仕様 よくある質問
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39 (TO-205AD)
  • Transistor Polarity:NPN
  • Package:Bulk
  • Current-Collector (Ic) (Max):800 mA
  • Base Product Number:2N2219
  • Mfr:Microchip Technology
  • Product Status:Active
  • Emitter- Base Voltage VEBO:6 V
  • Pd - Power Dissipation:800 mW
  • Maximum Operating Temperature:+ 200 C
  • DC Collector/Base Gain hfe Min:75 at 1mA, 10 VDC
  • Collector-Emitter Saturation Voltage:300 mV
  • Unit Weight:0.192949 oz
  • Minimum Operating Temperature:- 55 C
  • Factory Pack QuantityFactory Pack Quantity:1
  • Mounting Styles:Through Hole
  • Gain Bandwidth Product fT:-
  • Manufacturer:Microchip
  • Brand:Microchip Technology / Atmel
  • Maximum DC Collector Current:800 mA
  • DC Current Gain hFE Max:325 at 1 mA, 10 VDC
  • RoHS:N
  • Collector- Emitter Voltage VCEO Max:50 V
  • Operating Temperature:-55°C ~ 200°C (TJ)
  • Series:-
  • Packaging:Bulk
  • Subcategory:Transistors
  • Technology:Si
  • Configuration:Single
  • Power Dissipation:3
  • Power - Max:800 mW
  • Product Type:BJTs - Bipolar Transistors
  • Transistor Type:NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Current - Collector Cutoff (Max):10nA
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Frequency - Transition:-
  • Collector Base Voltage (VCBO):75 V
  • Continuous Collector Current:800
  • Product Category:Bipolar Transistors - BJT

在庫數 33

小計金額 $0.00000