JAN2N3439

Microchip
Transistors - Bipolar (BJT) - Single
TO-39-3
Trans GP BJT NPN 350V 1A 3-Pin TO-39
Date Sheet

在庫數 27

小計金額 $0.00000

仕様よくある質問

Package / Case：TO-39-3
Mounting Type：Through Hole
Surface Mount：NO
Supplier Device Package：TO-39 (TO-205AD)
Number of Terminals：3
Transistor Element Material：SILICON
Transistor Polarity：NPN
Emitter- Base Voltage VEBO：7 V
Pd - Power Dissipation：800 mW
Maximum Operating Temperature：+ 200 C
DC Collector/Base Gain hfe Min：40 at 20mA, 10 V
Collector-Emitter Saturation Voltage：500 mV
Minimum Operating Temperature：- 65 C
Factory Pack QuantityFactory Pack Quantity：1
Mounting Styles：Through Hole
Gain Bandwidth Product fT：-
Manufacturer：Microchip
Brand：Microchip / Microsemi
Maximum DC Collector Current：1 A
DC Current Gain hFE Max：160 at 20 mA, 10 V
RoHS：N
Collector- Emitter Voltage VCEO Max：350 V
Package：Bulk
Current-Collector (Ic) (Max)：1 A
Base Product Number：2N3439
Mfr：Microchip Technology
Product Status：Active
Package Description：CYLINDRICAL, O-MBCY-W3
Package Style：CYLINDRICAL
Package Body Material：METAL
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：200 °C
Rohs Code：No
Transition Frequency-Nom (fT)：15 MHz
Manufacturer Part Number：JAN2N3439
Turn-on Time-Max (ton)：1000 ns
Package Shape：ROUND
Number of Elements：1
Part Life Cycle Code：Active
Samacsys Description：Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-39 Bag
Ihs Manufacturer：MICROSEMI CORP
Turn-off Time-Max (toff)：10000 ns
Risk Rank：1.54
Packaging：Bulk
Operating Temperature：-65°C ~ 200°C (TJ)
Series：Military, MIL-PRF-19500/368
JESD-609 Code：e0
Pbfree Code：No
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
HTS Code：8541.21.00.95
Subcategory：Transistors
Technology：Si
Terminal Position：BOTTOM
Terminal Form：WIRE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
Reference Standard：MIL-19500
JESD-30 Code：O-MBCY-W3
Qualification Status：Qualified
Configuration：Single
Power Dissipation：5
Case Connection：COLLECTOR
Power - Max：800 mW
Polarity/Channel Type：NPN
Product Type：BJTs - Bipolar Transistors
Transistor Type：NPN
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 20mA, 10V
Current - Collector Cutoff (Max)：2µA
JEDEC-95 Code：TO-205AD
Vce Saturation (Max) @ Ib, Ic：500mV @ 4mA, 50mA
Voltage - Collector Emitter Breakdown (Max)：350 V
Frequency - Transition：-
Collector Base Voltage (VCBO)：450 V
Power Dissipation-Max (Abs)：5 W
Collector Current-Max (IC)：1 A
DC Current Gain-Min (hFE)：40
Continuous Collector Current：1
Collector-Emitter Voltage-Max：350 V
Product Category：Bipolar Transistors - BJT

在庫數 27

小計金額 $0.00000

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JAN2N3439