APT30F60J

Microchip
Transistors - FETs, MOSFETs - Single
SOT-227-4, miniBLOC
MOSFET N-CH 600V 31A ISOTOP
Date Sheet

在庫數 45

小計金額 $0.00000

仕様よくある質問

Package / Case：SOT-227-4, miniBLOC
Mounting Type：Chassis Mount
Mount：Chassis Mount, Screw
Surface Mount：NO
Number of Pins：4
Supplier Device Package：ISOTOP®
Weight：30.000004 g
Number of Terminals：4
Transistor Element Material：SILICON
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 2.5mA
Product Status：Active
Power Dissipation (Max)：355W (Tc)
Mfr：Microchip Technology
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：31A (Tc)
Base Product Number：APT30F60
Package：Tube
Schedule B：8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080
Number of Elements：1
RoHS：Compliant
Turn Off Delay Time：145 ns
Package Description：ISOTOP-4
Package Style：FLANGE MOUNT
Package Body Material：UNSPECIFIED
Manufacturer Package Code：ISOTOP
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：APT30F60J
Package Shape：RECTANGULAR
Manufacturer：Microsemi Corporation
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：1.52
Part Package Code：ISOTOP
Drain Current-Max (ID)：31 A
Series：POWER MOS 8™
Operating Temperature：-55°C ~ 150°C (TJ)
Pbfree Code：Yes
Part Status：Production (Last Updated: 2 months ago)
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Additional Feature：AVALANCHE RATED, UL RECOGNIZED
Max Power Dissipation：355 W
Technology：MOSFET (Metal Oxide)
Terminal Position：UPPER
Terminal Form：UNSPECIFIED
Peak Reflow Temperature (Cel)：NOT SPECIFIED
JESD-30 Code：R-XUFM-X4
Qualification Status：Not Qualified
Configuration：SINGLE WITH BUILT-IN DIODE
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：355 W
Case Connection：ISOLATED
Turn On Delay Time：48 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：150mOhm @ 21A, 10V
Input Capacitance (Ciss) (Max) @ Vds：8590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：215 nC @ 10 V
Rise Time：55 ns
Drain to Source Voltage (Vdss)：600 V
Vgs (Max)：±30V
Polarity/Channel Type：N-CHANNEL
Continuous Drain Current (ID)：31 A
Gate to Source Voltage (Vgs)：30 V
Drain-source On Resistance-Max：0.15 Ω
Drain to Source Breakdown Voltage：600 V
Pulsed Drain Current-Max (IDM)：160 A
Input Capacitance：8.59 nF
DS Breakdown Voltage-Min：600 V
Avalanche Energy Rating (Eas)：1200 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-
Drain to Source Resistance：120 mΩ
Rds On Max：150 mΩ
Width：25.4 mm
Height：9.6 mm
Length：38.2 mm
Radiation Hardening：No
REACH SVHC：unknown

在庫數 45

小計金額 $0.00000

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APT30F60J