2N3879

Microchip
Transistors - Bipolar (BJT) - Single
TO-213AA, TO-66-2
Trans GP BJT NPN 75V 7A 3-Pin(2 Tab) TO-66
Date Sheet

在庫數 118

小計金額 $0.00000

仕様よくある質問

Mounting Type：Through Hole
Package / Case：TO-213AA, TO-66-2
Surface Mount：NO
Number of Pins：2
Supplier Device Package：TO-66 (TO-213AA)
Number of Terminals：2
Transistor Element Material：SILICON
Transistor Polarity：NPN
Package：Bulk
Current-Collector (Ic) (Max)：7 A
Base Product Number：2N3879
Mfr：Microchip Technology
Product Status：Active
Emitter- Base Voltage VEBO：7 V
Pd - Power Dissipation：35 W
Maximum Operating Temperature：+ 200 C
Collector-Emitter Saturation Voltage：1.2 V
Unit Weight：0.634459 oz
Minimum Operating Temperature：- 65 C
Factory Pack QuantityFactory Pack Quantity：1
Mounting Styles：Through Hole
Gain Bandwidth Product fT：-
Manufacturer：Microchip
Brand：Microchip Technology / Atmel
Maximum DC Collector Current：7 A
RoHS：N
Collector- Emitter Voltage VCEO Max：75 V
Package Style：FLANGE MOUNT
Package Body Material：METAL
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：200 °C
Rohs Code：No
Transition Frequency-Nom (fT)：40 MHz
Manufacturer Part Number：2N3879
Package Shape：ROUND
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：5.07
Part Package Code：TO-66
Operating Temperature：-65°C ~ 200°C (TJ)
Series：-
Packaging：Tray
JESD-609 Code：e0
Pbfree Code：No
ECCN Code：EAR99
Terminal Finish：TIN LEAD
Subcategory：Transistors
Technology：Si
Terminal Position：BOTTOM
Terminal Form：PIN/PEG
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：unknown
JESD-30 Code：O-MBFM-P2
Qualification Status：Not Qualified
Configuration：Single
Case Connection：COLLECTOR
Power - Max：35 W
Polarity/Channel Type：NPN
Product Type：BJTs - Bipolar Transistors
Transistor Type：NPN
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 500mA, 5V
Current - Collector Cutoff (Max)：4mA
JEDEC-95 Code：TO-213AA
Vce Saturation (Max) @ Ib, Ic：1.2V @ 400mA, 4A
Voltage - Collector Emitter Breakdown (Max)：75 V
Frequency - Transition：-
Collector Base Voltage (VCBO)：120 V
Power Dissipation-Max (Abs)：35 W
Collector Current-Max (IC)：7 A
DC Current Gain-Min (hFE)：12
Continuous Collector Current：7
Collector-Emitter Voltage-Max：75 V
Product Category：Bipolar Transistors - BJT

在庫數 118

小計金額 $0.00000

Phone

2N3879