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APT66F60B2
-
Microchip
-
Transistors - FETs, MOSFETs - Single
- TO-247-3 Variant
- Trans MOSFET N-CH Si 600V 70A 3-Pin(3 Tab) T-MAX Tube
Date Sheet
在庫數 9000
- 1+: $14.67587
- 10+: $13.84516
- 100+: $13.06147
- 500+: $12.32214
- 1000+: $11.62466
小計金額 $14.67587
仕様 よくある質問
- Lifecycle Status:Production (Last Updated: 1 month ago)
- Mounting Type:Free Hanging (In-Line)
- Mount:Through Hole
- Package / Case:TO-247-3 Variant
- Surface Mount:NO
- Mounting Feature:-
- Number of Pins:3
- Shell Material:Aluminum Alloy
- Supplier Device Package:T-MAX™ [B2]
- Number of Terminals:3
- Transistor Element Material:SILICON
- Voltage, Rating:500VAC, 700VDC
- Package:Bulk
- Primary Material:Metal
- Base Product Number:MS3106R20
- Mfr:ITT Cannon, LLC
- Product Status:Active
- Contact Finish Mating:Silver
- Schedule B:8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080
- Number of Elements:1
- RoHS:Compliant
- Turn Off Delay Time:225 ns
- Current - Continuous Drain (Id) @ 25℃:70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Power Dissipation (Max):1135W (Tc)
- Package Description:IN-LINE, R-PSIP-T3
- Package Style:IN-LINE
- Package Body Material:PLASTIC/EPOXY
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:150 °C
- Rohs Code:Yes
- Manufacturer Part Number:APT66F60B2
- Package Shape:RECTANGULAR
- Manufacturer:Microsemi Corporation
- Part Life Cycle Code:Active
- Ihs Manufacturer:MICROSEMI CORP
- Risk Rank:1.47
- Drain Current-Max (ID):66 A
- Operating Temperature:-55°C ~ 125°C
- Series:Military, MIL-DTL-5015, MS
- JESD-609 Code:e3
- Pbfree Code:Yes
- Termination:Solder Cup
- Connector Type:Plug, Female Sockets
- Number of Positions:11
- Terminal Finish:PURE MATTE TIN
- Max Operating Temperature:150 °C
- Min Operating Temperature:-55 °C
- Color:Olive Drab
- Additional Feature:AVALANCHE RATED, HIGH RELIABILITY
- Fastening Type:Threaded
- Current Rating (Amps):22A
- Max Power Dissipation:1.135 kW
- Technology:MOSFET (Metal Oxide)
- Terminal Position:SINGLE
- Orientation:N (Normal)
- Terminal Form:THROUGH-HOLE
- Shielding:-
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Ingress Protection:Environment Resistant
- Reach Compliance Code:compliant
- Shell Finish:Olive Drab Cadmium
- Pin Count:3
- Shell Size - Insert:20-33
- JESD-30 Code:R-PSIP-T3
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Shell Size, MIL:-
- Case Connection:DRAIN
- Turn On Delay Time:75 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:90mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id:5V @ 2.5mA
- Input Capacitance (Ciss) (Max) @ Vds:13190 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs:330 nC @ 10 V
- Rise Time:85 ns
- Drain to Source Voltage (Vdss):600 V
- Vgs (Max):±30V
- Polarity/Channel Type:N-CHANNEL
- Continuous Drain Current (ID):70 A
- Gate to Source Voltage (Vgs):30 V
- Drain-source On Resistance-Max:0.1 Ω
- Pulsed Drain Current-Max (IDM):245 A
- Input Capacitance:13.19 nF
- DS Breakdown Voltage-Min:600 V
- Avalanche Energy Rating (Eas):1845 mJ
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- FET Feature:-
- Drain to Source Resistance:75 mΩ
- Rds On Max:90 mΩ
- Features:Backshell, Coupling Nut
- Width:16.26 mm
- Height:5.31 mm
- Length:21.46 mm
- Contact Finish Thickness - Mating:-
- Radiation Hardening:No
在庫數 9000
- 1+: $14.67587
- 10+: $13.84516
- 100+: $13.06147
- 500+: $12.32214
- 1000+: $11.62466
小計金額 $14.67587











