APL602J

Microchip
Transistors - FETs, MOSFETs - Single
HC-49/US
MOSFET N-CH 600V 43A ISOTOP
Date Sheet

在庫數 9000

小計金額 $0.00000

仕様よくある質問

Mounting Type：Surface Mount
Package / Case：HC-49/US
Surface Mount：NO
Number of Pins：4
Supplier Device Package：ISOTOP®
Number of Terminals：4
Transistor Element Material：SILICON
Package：Bulk
Mfr：Suntsu Electronics, Inc.
Product Status：Active
Base Product Number：APL602
Current - Continuous Drain (Id) @ 25℃：43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：12V
Power Dissipation (Max)：565W (Tc)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 2.5mA
Package Description：FLANGE MOUNT, R-PUFM-X4
Package Style：FLANGE MOUNT
Moisture Sensitivity Levels：1
Package Body Material：PLASTIC/EPOXY
Manufacturer Package Code：ISOTOP
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：APL602J
Package Shape：RECTANGULAR
Manufacturer：Microsemi Corporation
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Drain Current-Max (ID)：43 A
Part Package Code：ISOTOP
Risk Rank：5.28
Operating Temperature：-30°C ~ 85°C
Series：SXTHM2
Size / Dimension：0.524 L x 0.197 W (13.30mm x 5.00mm)
JESD-609 Code：e1
Type：MHz Crystal
Terminal Finish：TIN SILVER COPPER
Additional Feature：UL RECOGNIZED
Subcategory：FET General Purpose Power
Technology：MOSFET (Metal Oxide)
Terminal Position：UPPER
Terminal Form：UNSPECIFIED
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Frequency：30 MHz
Frequency Stability：±25ppm
JESD-30 Code：R-PUFM-X4
Qualification Status：Not Qualified
ESR (Equivalent Series Resistance)：30 Ohms
Configuration：SINGLE WITH BUILT-IN DIODE
Load Capacitance：18pF
Operating Mode：Fundamental
Case Connection：ISOLATED
Frequency Tolerance：±25ppm
FET Type：N-Channel
Transistor Application：AMPLIFIER
Rds On (Max) @ Id, Vgs：125mOhm @ 21.5A, 12V
Input Capacitance (Ciss) (Max) @ Vds：9000 pF @ 25 V
Drain to Source Voltage (Vdss)：600 V
Vgs (Max)：±30V
Polarity/Channel Type：N-CHANNEL
Drain Current-Max (Abs) (ID)：43 A
Drain-source On Resistance-Max：0.125 Ω
Pulsed Drain Current-Max (IDM)：172 A
DS Breakdown Voltage-Min：600 V
Avalanche Energy Rating (Eas)：3000 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)：565 W
FET Feature：-
Height Seated (Max)：0.177 (4.50mm)
REACH SVHC：compliant

在庫數 9000

小計金額 $0.00000

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APL602J