APT58F50J

Microchip
Transistors - FETs, MOSFETs - Single
HC-49/US
MOSFET N-CH 500V 58A ISOTOP
Date Sheet

在庫數 50

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：Production (Last Updated: 2 months ago)
Mounting Type：Surface Mount
Package / Case：HC-49/US
Mount：Chassis Mount, Screw
Surface Mount：NO
Number of Pins：4
Supplier Device Package：ISOTOP®
Number of Terminals：4
Transistor Element Material：SILICON
Package：Bulk
Mfr：Suntsu Electronics, Inc.
Product Status：Active
Base Product Number：APT58F50
Current - Continuous Drain (Id) @ 25℃：58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Power Dissipation (Max)：540W (Tc)
Schedule B：8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080
Number of Elements：1
RoHS：Compliant
Package Description：ROHS COMPLIANT, ISOTOP-4
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Manufacturer Package Code：ISOTOP
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Manufacturer Part Number：APT58F50J
Package Shape：RECTANGULAR
Manufacturer：Microsemi Corporation
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：5.37
Part Package Code：ISOTOP
Drain Current-Max (ID)：58 A
Operating Temperature：-10°C ~ 70°C
Series：SXTHM2
Size / Dimension：0.524 L x 0.197 W (13.30mm x 5.00mm)
Pbfree Code：Yes
Type：MHz Crystal
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Additional Feature：AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED
Max Power Dissipation：540 W
Technology：MOSFET (Metal Oxide)
Terminal Position：UPPER
Terminal Form：UNSPECIFIED
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：unknown
Frequency：24 MHz
Frequency Stability：±50ppm
Pin Count：4
JESD-30 Code：R-PUFM-X4
Qualification Status：Not Qualified
ESR (Equivalent Series Resistance)：30 Ohms
Configuration：SINGLE WITH BUILT-IN DIODE
Load Capacitance：19pF
Operating Mode：Fundamental
Power Dissipation：540 W
Case Connection：ISOLATED
Frequency Tolerance：±50ppm
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：65mOhm @ 42A, 10V
Vgs(th) (Max) @ Id：5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds：13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：340 nC @ 10 V
Drain to Source Voltage (Vdss)：500 V
Vgs (Max)：±30V
Polarity/Channel Type：N-CHANNEL
Continuous Drain Current (ID)：58 A
Gate to Source Voltage (Vgs)：30 V
Drain-source On Resistance-Max：0.065 Ω
Pulsed Drain Current-Max (IDM)：270 A
Input Capacitance：13.5 nF
DS Breakdown Voltage-Min：500 V
Avalanche Energy Rating (Eas)：1845 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-
Rds On Max：65 mΩ
Height Seated (Max)：0.177 (4.50mm)

在庫數 50

小計金額 $0.00000

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APT58F50J