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APT24F50B

在庫數 223

小計金額 $0.00000

仕様 よくある質問
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 [B]
  • Continuous Drain Current Id:24
  • Package:Tube
  • Base Product Number:APT24F50
  • Current - Continuous Drain (Id) @ 25℃:24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Mfr:Microchip Technology
  • Power Dissipation (Max):335W (Tc)
  • Product Status:Active
  • Vds - Drain-Source Breakdown Voltage:500 V
  • Typical Turn-On Delay Time:16 ns
  • Vgs th - Gate-Source Threshold Voltage:4 V
  • Pd - Power Dissipation:335 W
  • Transistor Polarity:N-Channel
  • Maximum Operating Temperature:+ 150 C
  • Vgs - Gate-Source Voltage:- 30 V, + 30 V
  • Unit Weight:0.211644 oz
  • Minimum Operating Temperature:- 55 C
  • Factory Pack QuantityFactory Pack Quantity:1
  • Mounting Styles:Through Hole
  • Forward Transconductance - Min:17 S
  • Channel Mode:Enhancement
  • Manufacturer:Microchip
  • Brand:Microchip Technology / Atmel
  • Qg - Gate Charge:90 nC
  • Rds On - Drain-Source Resistance:240 mOhms
  • RoHS:Details
  • Typical Turn-Off Delay Time:41 ns
  • Id - Continuous Drain Current:24 A
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Series:POWER MOS 8™
  • Packaging:Tube
  • Subcategory:MOSFETs
  • Technology:MOSFET (Metal Oxide)
  • Configuration:Single
  • Number of Channels:1 Channel
  • Power Dissipation:335
  • FET Type:N-Channel
  • Rds On (Max) @ Id, Vgs:240mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds:3630 pF @ 25 V
  • Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
  • Rise Time:19 ns
  • Drain to Source Voltage (Vdss):500 V
  • Vgs (Max):±30V
  • Product Type:MOSFET
  • Channel Type:N
  • FET Feature:-
  • Product Category:MOSFET
  • Width:5.31 mm
  • Height:21.46 mm
  • Length:16.26 mm

在庫數 223

小計金額 $0.00000