画像はあくまで参考です。
APT35GA90BD15
-
Microchip
-
Transistors - IGBTs - Single
- TO-247-3
- Trans IGBT Chip N-CH 900V 63A 3-Pin(3 Tab) TO-247
Date Sheet
在庫數 30
小計金額 $0.00000
仕様 よくある質問
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Surface Mount:NO
- Supplier Device Package:TO-247 [B]
- Number of Terminals:3
- Transistor Element Material:SILICON
- Collector-Emitter Saturation Voltage:2.5
- Package:Tube
- Current-Collector (Ic) (Max):63 A
- Base Product Number:APT35GA90
- Mfr:Microchip Technology
- Product Status:Active
- Test Conditions:600V, 18A, 10Ohm, 15V
- Factory Pack QuantityFactory Pack Quantity:1
- Manufacturer:Microchip
- Brand:Microchip Technology
- RoHS:Details
- Package Description:ROHS COMPLIANT, TO-247, 3 PIN
- Package Style:FLANGE MOUNT
- Package Body Material:PLASTIC/EPOXY
- Turn-on Time-Nom (ton):18 ns
- Turn-off Time-Nom (toff):281 ns
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:150 °C
- Rohs Code:Yes
- Manufacturer Part Number:APT35GA90BD15
- Package Shape:RECTANGULAR
- Number of Elements:1
- Part Life Cycle Code:Active
- Ihs Manufacturer:MICROSEMI CORP
- Risk Rank:2.2
- Part Package Code:TO-247AD
- Operating Temperature:-55°C ~ 150°C (TJ)
- Series:-
- Packaging:Tube
- JESD-609 Code:e1
- Pbfree Code:Yes
- ECCN Code:EAR99
- Terminal Finish:Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature:LOW CONDUCTION LOSS
- Subcategory:IGBTs
- Technology:Si
- Terminal Position:SINGLE
- Terminal Form:THROUGH-HOLE
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:unknown
- Pin Count:3
- JESD-30 Code:R-PSFM-T3
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN DIODE
- Power Dissipation:290
- Case Connection:COLLECTOR
- Input Type:Standard
- Power - Max:290 W
- Transistor Application:POWER CONTROL
- Polarity/Channel Type:N-CHANNEL
- Product Type:IGBT Transistors
- JEDEC-95 Code:TO-247AD
- Voltage - Collector Emitter Breakdown (Max):900 V
- Vce(on) (Max) @ Vge, Ic:3.1V @ 15V, 18A
- Collector Current-Max (IC):63 A
- Continuous Collector Current:63
- IGBT Type:PT
- Collector-Emitter Voltage-Max:900 V
- Gate Charge:84 nC
- Current - Collector Pulsed (Icm):105 A
- Td (on/off) @ 25°C:12ns/104ns
- Switching Energy:642µJ (on), 382µJ (off)
- Product Category:IGBT Transistors
在庫數 30
小計金額 $0.00000











