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APT35GA90BD15

在庫數 30

小計金額 $0.00000

仕様 よくある質問
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Surface Mount:NO
  • Supplier Device Package:TO-247 [B]
  • Number of Terminals:3
  • Transistor Element Material:SILICON
  • Collector-Emitter Saturation Voltage:2.5
  • Package:Tube
  • Current-Collector (Ic) (Max):63 A
  • Base Product Number:APT35GA90
  • Mfr:Microchip Technology
  • Product Status:Active
  • Test Conditions:600V, 18A, 10Ohm, 15V
  • Factory Pack QuantityFactory Pack Quantity:1
  • Manufacturer:Microchip
  • Brand:Microchip Technology
  • RoHS:Details
  • Package Description:ROHS COMPLIANT, TO-247, 3 PIN
  • Package Style:FLANGE MOUNT
  • Package Body Material:PLASTIC/EPOXY
  • Turn-on Time-Nom (ton):18 ns
  • Turn-off Time-Nom (toff):281 ns
  • Reflow Temperature-Max (s):NOT SPECIFIED
  • Operating Temperature-Max:150 °C
  • Rohs Code:Yes
  • Manufacturer Part Number:APT35GA90BD15
  • Package Shape:RECTANGULAR
  • Number of Elements:1
  • Part Life Cycle Code:Active
  • Ihs Manufacturer:MICROSEMI CORP
  • Risk Rank:2.2
  • Part Package Code:TO-247AD
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Series:-
  • Packaging:Tube
  • JESD-609 Code:e1
  • Pbfree Code:Yes
  • ECCN Code:EAR99
  • Terminal Finish:Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature:LOW CONDUCTION LOSS
  • Subcategory:IGBTs
  • Technology:Si
  • Terminal Position:SINGLE
  • Terminal Form:THROUGH-HOLE
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Reach Compliance Code:unknown
  • Pin Count:3
  • JESD-30 Code:R-PSFM-T3
  • Qualification Status:Not Qualified
  • Configuration:SINGLE WITH BUILT-IN DIODE
  • Power Dissipation:290
  • Case Connection:COLLECTOR
  • Input Type:Standard
  • Power - Max:290 W
  • Transistor Application:POWER CONTROL
  • Polarity/Channel Type:N-CHANNEL
  • Product Type:IGBT Transistors
  • JEDEC-95 Code:TO-247AD
  • Voltage - Collector Emitter Breakdown (Max):900 V
  • Vce(on) (Max) @ Vge, Ic:3.1V @ 15V, 18A
  • Collector Current-Max (IC):63 A
  • Continuous Collector Current:63
  • IGBT Type:PT
  • Collector-Emitter Voltage-Max:900 V
  • Gate Charge:84 nC
  • Current - Collector Pulsed (Icm):105 A
  • Td (on/off) @ 25°C:12ns/104ns
  • Switching Energy:642µJ (on), 382µJ (off)
  • Product Category:IGBT Transistors

在庫數 30

小計金額 $0.00000