AGR21090EF

Advanced
Transistors - FETs, MOSFETs - RF
Axial
RF MOSFET Transistors 2.11-2.17GHz 19Watt Gain 14.5dB
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小計金額 $0.00000

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Package / Case：Axial
Surface Mount：YES
Supplier Device Package：Axial
Number of Terminals：2
Transistor Element Material：SILICON
Factory Pack QuantityFactory Pack Quantity：10
Manufacturer：Advanced Semiconductor, Inc.
Brand：Advanced Semiconductor, Inc.
RoHS：Details
Package Description：FLANGE MOUNT, R-CDFM-F2
Package Style：FLANGE MOUNT
Package Body Material：CERAMIC, METAL-SEALED COFIRED
Reflow Temperature-Max (s)：30
Operating Temperature-Max：200 °C
Manufacturer Part Number：AGR21090EF
Package Shape：RECTANGULAR
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：AVAGO TECHNOLOGIES INC
Risk Rank：5.25
Operating Temperature：-65°C ~ 175°C
Series：Military, MIL-PRF-55182/01, RNC55
Packaging：Bulk
Size / Dimension：0.094 Dia x 0.250 L (2.39mm x 6.35mm)
Tolerance：±0.5%
JESD-609 Code：e0
Part Status：Active
Number of Terminations：2
ECCN Code：EAR99
Temperature Coefficient：±25ppm/°C
Resistance：124 kOhms
Terminal Finish：TIN LEAD
Composition：Metal Film
Power (Watts)：0.125W, 1/8W
Additional Feature：HIGH RELIABILITY
Subcategory：MOSFETs
Technology：Si
Terminal Position：DUAL
Terminal Form：FLAT
Peak Reflow Temperature (Cel)：225
Reach Compliance Code：compliant
JESD-30 Code：R-CDFM-F2
Qualification Status：Not Qualified
Failure Rate：S (0.001%)
Configuration：SINGLE
Operating Mode：ENHANCEMENT MODE
Case Connection：SOURCE
Transistor Application：AMPLIFIER
Polarity/Channel Type：N-CHANNEL
Product Type：RF MOSFET Transistors
DS Breakdown Voltage-Min：65 V
FET Technology：METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)：250 W
Highest Frequency Band：S BAND
Features：Military, Moisture Resistant, Weldable
Product Category：RF MOSFET Transistors
Height Seated (Max)：--

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小計金額 $0.00000

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AGR21090EF