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JANSF2N2222AUA
-
Microchip
-
Transistors - Bipolar (BJT) - Single
- 4-SMD, No Lead
- TRANS NPN 50V 0.8A UA
Date Sheet
在庫數 2858
小計金額 $0.00000
仕様 よくある質問
- Mounting Type:Surface Mount
- Package / Case:4-SMD, No Lead
- Surface Mount:YES
- Supplier Device Package:UA
- Number of Terminals:4
- Transistor Element Material:SILICON
- Package:Tray
- Current-Collector (Ic) (Max):800 mA
- Base Product Number:2N2222
- Mfr:Microchip Technology
- Product Status:Active
- Emitter- Base Voltage VEBO:6 V
- Pd - Power Dissipation:650 mW
- Transistor Polarity:NPN
- Maximum Operating Temperature:+ 200 C
- DC Collector/Base Gain hfe Min:75
- Collector-Emitter Saturation Voltage:1 V
- Minimum Operating Temperature:- 65 C
- Factory Pack QuantityFactory Pack Quantity:1
- Mounting Styles:SMD/SMT
- Manufacturer:Microchip
- Brand:Microchip / Microsemi
- DC Current Gain hFE Max:325
- RoHS:N
- Collector- Emitter Voltage VCEO Max:50 V
- Package Description:SMALL OUTLINE, R-CDSO-N4
- Package Style:SMALL OUTLINE
- Package Body Material:CERAMIC, METAL-SEALED COFIRED
- Operating Temperature-Max:200 °C
- Rohs Code:No
- Manufacturer Part Number:JANSF2N2222AUA
- Turn-on Time-Max (ton):35 ns
- Package Shape:RECTANGULAR
- Number of Elements:1
- Part Life Cycle Code:Active
- Ihs Manufacturer:MICROSEMI CORP
- Turn-off Time-Max (toff):300 ns
- Risk Rank:5.04
- Operating Temperature:-65°C ~ 200°C (TJ)
- Series:Military, MIL-PRF-19500/255
- Pbfree Code:No
- ECCN Code:EAR99
- HTS Code:8541.21.00.95
- Subcategory:Transistors
- Technology:Si
- Terminal Position:DUAL
- Terminal Form:NO LEAD
- Reach Compliance Code:compliant
- Reference Standard:MIL-19500/255
- JESD-30 Code:R-CDSO-N4
- Qualification Status:Qualified
- Configuration:Single
- Power - Max:650 mW
- Transistor Application:SWITCHING
- Polarity/Channel Type:NPN
- Product Type:BJTs - Bipolar Transistors
- Transistor Type:NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
- Current - Collector Cutoff (Max):50nA
- Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max):50 V
- Frequency - Transition:-
- Collector Base Voltage (VCBO):75 V
- Collector Current-Max (IC):0.8 A
- DC Current Gain-Min (hFE):30
- Continuous Collector Current:800 mA
- Collector-Emitter Voltage-Max:50 V
- Product Category:Bipolar Transistors - BJT
在庫數 2858
小計金額 $0.00000











