APT39F60J

Microchip
Transistors - FETs, MOSFETs - Single
SOT-227-4, miniBLOC
MOSFET N-CH 600V 42A ISOTOP
Date Sheet

在庫數 8

小計金額 $0.00000

仕様よくある質問

Mounting Type：Chassis Mount
Package / Case：SOT-227-4, miniBLOC
Mount：Chassis Mount, Screw
Surface Mount：NO
Number of Pins：4
Supplier Device Package：ISOTOP®
Number of Terminals：4
Transistor Element Material：SILICON
Manufacturer Part Number：78101197459
Manufacturer：Cooper
Package：Tube
Base Product Number：APT39F60
Current - Continuous Drain (Id) @ 25℃：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Mfr：Microchip Technology
Power Dissipation (Max)：480W (Tc)
Product Status：Active
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 2.5mA
Maximum Operating Temperature：+ 150 C
Vgs - Gate-Source Voltage：- 30 V, + 30 V
Unit Weight：1.030000 oz
Minimum Operating Temperature：- 55 C
Factory Pack QuantityFactory Pack Quantity：1
Mounting Styles：Screw Mounts
Brand：Microchip Technology
RoHS：Details
Number of Elements：1
Turn Off Delay Time：190 ns
Package Description：ISOTOP-4
Package Style：FLANGE MOUNT
Package Body Material：UNSPECIFIED
Manufacturer Package Code：ISOTOP
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Rohs Code：Yes
Package Shape：RECTANGULAR
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：2.33
Part Package Code：ISOTOP
Drain Current-Max (ID)：42 A
Operating Temperature：-55°C ~ 150°C (TJ)
Series：POWER MOS 8™
Packaging：Tube
Pbfree Code：Yes
Part Status：Production (Last Updated: 2 months ago)
Type：MOSFET
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Additional Feature：AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNISED
Subcategory：Discrete Semiconductor Modules
Max Power Dissipation：480 W
Technology：MOSFET (Metal Oxide)
Terminal Position：UPPER
Terminal Form：UNSPECIFIED
Peak Reflow Temperature (Cel)：NOT SPECIFIED
JESD-30 Code：R-XUFM-X4
Qualification Status：Not Qualified
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：480 W
Case Connection：ISOLATED
Turn On Delay Time：65 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：110mOhm @ 28A, 10V
Input Capacitance (Ciss) (Max) @ Vds：11300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：280 nC @ 10 V
Rise Time：75 ns
Drain to Source Voltage (Vdss)：600 V
Vgs (Max)：±30V
Polarity/Channel Type：N-CHANNEL
Product Type：Discrete Semiconductor Modules
Continuous Drain Current (ID)：42 A
Gate to Source Voltage (Vgs)：30 V
Drain-source On Resistance-Max：0.11 Ω
Pulsed Drain Current-Max (IDM)：210 A
Input Capacitance：11.3 nF
DS Breakdown Voltage-Min：600 V
Avalanche Energy Rating (Eas)：1580 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：-
Rds On Max：110 mΩ
Product：Power MOSFET Modules
Product Category：Discrete Semiconductor Modules
Radiation Hardening：No
REACH SVHC：unknown

在庫數 8

小計金額 $0.00000

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APT39F60J