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APTM100A40FT1G
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Microchip
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Transistors - FETs, MOSFETs - Arrays
- MOSFET 2N-CH 1000V 21A SP1
Date Sheet
在庫數 0
小計金額 $0.00000
仕様 よくある質問
- Surface Mount:NO
- Number of Terminals:12
- Transistor Element Material:SILICON
- Package Description:FLANGE MOUNT, R-XUFM-X12
- Package Style:FLANGE MOUNT
- Moisture Sensitivity Levels:1
- Package Body Material:UNSPECIFIED
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:150 °C
- Rohs Code:Yes
- Manufacturer Part Number:APTM100A40FT1G
- Package Shape:RECTANGULAR
- Manufacturer:Microsemi Corporation
- Number of Elements:2
- Part Life Cycle Code:Obsolete
- Ihs Manufacturer:MICROSEMI CORP
- Risk Rank:5.84
- Drain Current-Max (ID):21 A
- JESD-609 Code:e1
- Pbfree Code:Yes
- ECCN Code:EAR99
- Terminal Finish:TIN SILVER COPPER
- Additional Feature:AVALANCHE RATED
- Subcategory:FET General Purpose Power
- Terminal Position:UPPER
- Terminal Form:UNSPECIFIED
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:compliant
- Pin Count:12
- JESD-30 Code:R-XUFM-X12
- Qualification Status:Not Qualified
- Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- Operating Mode:ENHANCEMENT MODE
- Case Connection:ISOLATED
- Transistor Application:SWITCHING
- Polarity/Channel Type:N-CHANNEL
- Drain Current-Max (Abs) (ID):21 A
- Drain-source On Resistance-Max:0.48 Ω
- Pulsed Drain Current-Max (IDM):140 A
- DS Breakdown Voltage-Min:1000 V
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs):390 W
在庫數 0
小計金額 $0.00000











