MRF5812GR1

Microchip
Transistors - Bipolar (BJT) - RF
Trans Gp Bjt NPN 15V 0.2A 8-PIN SOIC T/r
Date Sheet

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小計金額 $0.00000

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Lifecycle Status：Obsolete (Last Updated: 2 months ago)
Mount：Surface Mount
Surface Mount：YES
Number of Pins：8
Number of Terminals：8
Transistor Element Material：SILICON
RoHS：Non-Compliant
Collector-Emitter Breakdown Voltage：15 V
Package Description：SMALL OUTLINE, R-PDSO-G8
Package Style：SMALL OUTLINE
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：40
Rohs Code：Yes
Transition Frequency-Nom (fT)：5000 MHz
Manufacturer Part Number：MRF5812GR1
Package Shape：RECTANGULAR
Manufacturer：Microsemi Corporation
Number of Elements：1
Part Life Cycle Code：Obsolete
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：7.93
Part Package Code：SOIC
Packaging：Bulk
JESD-609 Code：e3
Pbfree Code：Yes
ECCN Code：EAR99
Terminal Finish：MATTE TIN
Additional Feature：LOW NOISE
Subcategory：Other Transistors
Max Power Dissipation：1.25 W
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Reach Compliance Code：compliant
Pin Count：8
JESD-30 Code：R-PDSO-G8
Configuration：SINGLE
Transistor Application：AMPLIFIER
Polarity/Channel Type：NPN
Collector Emitter Voltage (VCEO)：15 V
Max Collector Current：200 mA
Gain：15.5 dB
Transition Frequency：5 GHz
Max Breakdown Voltage：15 V
Collector Base Voltage (VCBO)：30 V
Power Dissipation-Max (Abs)：1.25 W
Collector Current-Max (IC)：0.2 A
DC Current Gain-Min (hFE)：50
Collector-Emitter Voltage-Max：15 V
Highest Frequency Band：ULTRA HIGH FREQUENCY BAND
Collector-Base Capacitance-Max：2 pF
Radiation Hardening：No
Lead Free：Lead Free

在庫數 0

小計金額 $0.00000

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MRF5812GR1