Jan2N3772

Microchip
Transistors - Bipolar (BJT) - Single
TO-204AA, TO-3
Trans GP BJT NPN 60V 20A 6000mW 3-Pin(2 Tab) TO-3 Tray
Date Sheet

在庫數 2213

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：Production (Last Updated: 1 month ago)
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-204AA, TO-3
Surface Mount：NO
Number of Pins：3
Supplier Device Package：TO-3 (TO-204AA)
Number of Terminals：2
Transistor Element Material：SILICON
Schedule B：8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080
RoHS：Non-Compliant
Factory Pack QuantityFactory Pack Quantity：1
Manufacturer：Microchip
Brand：Microchip / Microsemi
Package：Bulk
Current-Collector (Ic) (Max)：20 A
Mfr：Microchip Technology
Product Status：Discontinued at Digi-Key
Package Description：SIMILAR TO TO-3, 2 PIN
Package Style：FLANGE MOUNT
Package Body Material：METAL
Operating Temperature-Min：-65 °C
Operating Temperature-Max：200 °C
Transition Frequency-Nom (fT)：0.2 MHz
Manufacturer Part Number：JAN2N3772
Package Shape：ROUND
Number of Elements：1
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：5.21
Part Package Code：TO-204AA
Packaging：Bulk
Operating Temperature：-65°C ~ 200°C (TJ)
Series：Military, MIL-PRF-19500/518
JESD-609 Code：e0
ECCN Code：EAR99
Terminal Finish：TIN LEAD
Max Operating Temperature：125 °C
Min Operating Temperature：-55 °C
HTS Code：8541.29.00.95
Subcategory：Transistors
Max Power Dissipation：6 W
Technology：Si
Terminal Position：BOTTOM
Terminal Form：PIN/PEG
Reach Compliance Code：compliant
Pin Count：2
Reference Standard：MIL-19500/413C
JESD-30 Code：O-MBFM-P2
Qualification Status：Qualified
Configuration：SINGLE
Case Connection：COLLECTOR
Power - Max：6 W
Transistor Application：SWITCHING
Polarity/Channel Type：NPN
Product Type：BJTs - Bipolar Transistors
Transistor Type：NPN
Collector Emitter Voltage (VCEO)：60 V
Max Collector Current：20 A
DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 10A, 4V
Current - Collector Cutoff (Max)：5mA
Vce Saturation (Max) @ Ib, Ic：4V @ 4A, 20A
Voltage - Collector Emitter Breakdown (Max)：60 V
Frequency - Transition：-
Collector Base Voltage (VCBO)：100 V
Power Dissipation-Max (Abs)：150 W
Collector Current-Max (IC)：20 A
DC Current Gain-Min (hFE)：15
Collector-Emitter Voltage-Max：60 V
Product Category：Bipolar Transistors - BJT
Radiation Hardening：No

在庫數 2213

小計金額 $0.00000

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Jan2N3772