MMBTA56LT3

ON Semiconductor
Transistors - FETs, MOSFETs - Single
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Date Sheet

在庫數 222

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：Obsolete (Last Updated: 2 years ago)
Surface Mount：YES
Number of Pins：3
Number of Terminals：3
Transistor Element Material：SILICON
Manufacturer Lifecycle Status：OBSOLETE (Last Updated: 2 years ago)
Voltage Rating (DC)：-80 V
hFEMin：100
Collector-Emitter Saturation Voltage：-250 mV
RoHS：Compliant
Package Description：SMALL OUTLINE, R-PDSO-G3
Package Style：SMALL OUTLINE
Package Body Material：PLASTIC/EPOXY
Operating Temperature-Max：150 °C
Transition Frequency-Nom (fT)：50 MHz
Manufacturer Part Number：MMBTA56LT3
Package Shape：RECTANGULAR
Manufacturer：Motorola Semiconductor Products
Number of Elements：1
Part Life Cycle Code：Transferred
Ihs Manufacturer：MOTOROLA INC
Risk Rank：8.23
Packaging：Tape and Reel
ECCN Code：EAR99
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
HTS Code：8541.21.00.95
Max Power Dissipation：225 mW
Terminal Position：DUAL
Terminal Form：GULL WING
Reach Compliance Code：unknown
Current Rating：-500 mA
JESD-30 Code：R-PDSO-G3
Qualification Status：Not Qualified
Polarity：PNP
Configuration：SINGLE
Element Configuration：Single
Transistor Application：SWITCHING
Gain Bandwidth Product：50 MHz
Polarity/Channel Type：PNP
Collector Emitter Voltage (VCEO)：-80 V
Max Collector Current：500 mA
JEDEC-95 Code：TO-236AB
Collector Base Voltage (VCBO)：-80 V
Emitter Base Voltage (VEBO)：4 V
Collector Current-Max (IC)：0.5 A
DC Current Gain-Min (hFE)：100
Collector-Emitter Voltage-Max：80 V
VCEsat-Max：0.25 V
Power Dissipation Ambient-Max：0.225 W
Lead Free：Contains Lead

在庫數 222

小計金額 $0.00000

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MMBTA56LT3